| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2016-09-08 |
| タイトル |
|
|
タイトル |
Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Proton-conducting solid electrolyte thin film |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Tantalum oxide |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Reactive sputtering |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Ionic conductivity |
| 資源タイプ |
|
|
資源 |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
Abe, Yoshio
Itadani, Naruhiro
Kawamura, Midori
Sasaki, Katsutaka
Itoh, Hidenobu
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Hydrogen-containing Ta2O5 (Ta2O5:H) thin films are considered to be a candidate for a proton-conducting solid-oxide electrolyte. In this study, Ta2O5:H thin films were prepared by reactively sputtering a Ta metal target in an O2 + H2O mixed gas. The effects of sputtering power and post-deposition heat treatment on the ion conducting properties of the Ta2O5:H thin films were studied. The ionic conductivity of the films was improved by decreasing the RF power and a maximum conductivity of 2 × 10?9 S/cm was obtained at an RF power of 20 W. The ionic conductivity decreased by heat-treatment in air, and no ion-conduction was observed after treatment at 300 °C due to the decrease in hydrogen content in the films. |
| 書誌情報 |
Vacuum
巻 83,
号 3,
p. 528-530,
発行日 2008
|
| DOI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
https://doi.org/10.1016/j.vacuum.2008.04.018 |
| 権利 |
|
|
権利情報 |
c 2008 Elsevier |
| 出版者 |
|
|
出版者 |
Elsevier |
| 著者版フラグ |
|
|
言語 |
en |
|
値 |
author |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
No_5_Vaccum_83_528.pdf (858.7 kB)
