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Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering
https://kitami-it.repo.nii.ac.jp/records/8468
https://kitami-it.repo.nii.ac.jp/records/8468250c1920-b720-47f1-8422-e82aaa974057
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
No_5_Vaccum_83_528.pdf (858.7 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-09-08 | |||||
| タイトル | ||||||
| タイトル | Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Proton-conducting solid electrolyte thin film | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Tantalum oxide | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Reactive sputtering | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Ionic conductivity | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 著者 |
Abe, Yoshio
× Abe, Yoshio× Itadani, Naruhiro× Kawamura, Midori× Sasaki, Katsutaka× Itoh, Hidenobu |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44879 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000020261399 | |||||
| 識別子 | 20261399 | |||||
| 姓名 | 阿部, 良夫 | |||||
| 言語 | ja | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44880 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000070261401 | |||||
| 識別子 | 70261401 | |||||
| 姓名 | 川村, みどり | |||||
| 言語 | ja | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Hydrogen-containing Ta2O5 (Ta2O5:H) thin films are considered to be a candidate for a proton-conducting solid-oxide electrolyte. In this study, Ta2O5:H thin films were prepared by reactively sputtering a Ta metal target in an O2 + H2O mixed gas. The effects of sputtering power and post-deposition heat treatment on the ion conducting properties of the Ta2O5:H thin films were studied. The ionic conductivity of the films was improved by decreasing the RF power and a maximum conductivity of 2 × 10?9 S/cm was obtained at an RF power of 20 W. The ionic conductivity decreased by heat-treatment in air, and no ion-conduction was observed after treatment at 300 °C due to the decrease in hydrogen content in the films. | |||||
| 書誌情報 |
Vacuum 巻 83, 号 3, p. 528-530, 発行日 2008 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | https://doi.org/10.1016/j.vacuum.2008.04.018 | |||||
| 権利 | ||||||
| 権利情報 | c 2008 Elsevier | |||||
| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| 著者版フラグ | ||||||
| 値 | author | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
