Item type |
学術雑誌論文 / Journal Article(1) |
公開日 |
2016-09-08 |
タイトル |
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言語 |
en |
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タイトル |
Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering |
言語 |
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言語 |
eng |
キーワード |
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主題Scheme |
Other |
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主題 |
Proton-conducting solid electrolyte thin film |
キーワード |
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主題Scheme |
Other |
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主題 |
Tantalum oxide |
キーワード |
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主題Scheme |
Other |
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主題 |
Reactive sputtering |
キーワード |
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主題Scheme |
Other |
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主題 |
Ionic conductivity |
資源タイプ |
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資源 |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
著者 |
Abe, Yoshio
Itadani, Naruhiro
Kawamura, Midori
Sasaki, Katsutaka
Itoh, Hidenobu
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著者別名 |
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姓名 |
阿部, 良夫 |
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言語 |
ja |
著者別名 |
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姓名 |
川村, みどり |
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言語 |
ja |
抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Hydrogen-containing Ta2O5 (Ta2O5:H) thin films are considered to be a candidate for a proton-conducting solid-oxide electrolyte. In this study, Ta2O5:H thin films were prepared by reactively sputtering a Ta metal target in an O2 + H2O mixed gas. The effects of sputtering power and post-deposition heat treatment on the ion conducting properties of the Ta2O5:H thin films were studied. The ionic conductivity of the films was improved by decreasing the RF power and a maximum conductivity of 2 × 10?9 S/cm was obtained at an RF power of 20 W. The ionic conductivity decreased by heat-treatment in air, and no ion-conduction was observed after treatment at 300 °C due to the decrease in hydrogen content in the films. |
書誌情報 |
Vacuum
巻 83,
号 3,
p. 528-530,
発行日 2008
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DOI |
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識別子タイプ |
DOI |
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関連識別子 |
https://doi.org/10.1016/j.vacuum.2008.04.018 |
権利 |
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権利情報 |
c 2008 Elsevier |
出版者 |
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出版者 |
Elsevier |
著者版フラグ |
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値 |
author |
出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |