{"created":"2021-03-01T06:00:49.204795+00:00","id":8468,"links":{},"metadata":{"_buckets":{"deposit":"e7b1123d-8550-4af9-9bdf-1b35b10c0b55"},"_deposit":{"id":"8468","owners":[],"pid":{"revision_id":0,"type":"depid","value":"8468"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00008468","sets":["1:86"]},"author_link":["44879","44880","44643","44644","44645","44646","44647"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"530","bibliographicPageStart":"528","bibliographicVolumeNumber":"83","bibliographic_titles":[{"bibliographic_title":"Vacuum"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Hydrogen-containing Ta2O5 (Ta2O5:H) thin films are considered to be a candidate for a proton-conducting solid-oxide electrolyte. In this study, Ta2O5:H thin films were prepared by reactively sputtering a Ta metal target in an O2 + H2O mixed gas. The effects of sputtering power and post-deposition heat treatment on the ion conducting properties of the Ta2O5:H thin films were studied. The ionic conductivity of the films was improved by decreasing the RF power and a maximum conductivity of 2 × 10?9 S/cm was obtained at an RF power of 20 W. The ionic conductivity decreased by heat-treatment in air, and no ion-conduction was observed after treatment at 300 °C due to the decrease in hydrogen content in the films.","subitem_description_type":"Abstract"}]},"item_3_full_name_183":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44879","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20261399","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}],"names":[{"name":"阿部, 良夫","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"44880","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70261401","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000070261401 "}],"names":[{"name":"川村, みどり","nameLang":"ja"}]}]},"item_3_publisher_212":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_3_relation_191":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.vacuum.2008.04.018","subitem_relation_type_select":"DOI"}}]},"item_3_rights_192":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"c 2008 Elsevier"}]},"item_3_select_195":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Abe, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44643","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Itadani, Naruhiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44644","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawamura, Midori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44645","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Katsutaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44646","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Itoh, Hidenobu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44647","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-12"}],"displaytype":"detail","filename":"No_5_Vaccum_83_528.pdf","filesize":[{"value":"858.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"No_5_Vaccum_83_528.pdf","url":"https://kitami-it.repo.nii.ac.jp/record/8468/files/No_5_Vaccum_83_528.pdf"},"version_id":"11b3061d-804c-41e6-bc2d-55ddcc28f831"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Proton-conducting solid electrolyte thin film","subitem_subject_scheme":"Other"},{"subitem_subject":"Tantalum oxide","subitem_subject_scheme":"Other"},{"subitem_subject":"Reactive sputtering","subitem_subject_scheme":"Other"},{"subitem_subject":"Ionic conductivity","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["86"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-09-08"},"publish_date":"2016-09-08","publish_status":"0","recid":"8468","relation_version_is_last":true,"title":["Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-13T02:22:49.819849+00:00"}