@article{oai:kitami-it.repo.nii.ac.jp:00008468,
 author = {Abe, Yoshio and Itadani, Naruhiro and Kawamura, Midori and Sasaki, Katsutaka and Itoh, Hidenobu},
 issue = {3},
 journal = {Vacuum},
 month = {},
 note = {Hydrogen-containing Ta2O5 (Ta2O5:H) thin films are considered to be a candidate for a proton-conducting solid-oxide electrolyte. In this study, Ta2O5:H thin films were prepared by reactively sputtering a Ta metal target in an O2 + H2O mixed gas. The effects of sputtering power and post-deposition heat treatment on the ion conducting properties of the Ta2O5:H thin films were studied. The ionic conductivity of the films was improved by decreasing the RF power and a maximum conductivity of 2 × 10?9 S/cm was obtained at an RF power of 20 W. The ionic conductivity decreased by heat-treatment in air, and no ion-conduction was observed after treatment at 300 °C due to the decrease in hydrogen content in the films.},
 pages = {528--530},
 title = {Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering},
 volume = {83},
 year = {2008}
}