{"_buckets": {"deposit": "03ca7e36-ad49-4920-a2e9-26e2f6df9cfd"}, "_deposit": {"id": "8467", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "8467"}, "status": "published"}, "_oai": {"id": "oai:kitami-it.repo.nii.ac.jp:00008467", "sets": ["1"]}, "item_3_biblio_info_186": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2008-10", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3", "bibliographicPageEnd": "485", "bibliographicPageStart": "483", "bibliographicVolumeNumber": "83", "bibliographic_titles": [{"bibliographic_title": "Vacuum"}]}]}, "item_3_description_184": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Al and Al2O3 films were deposited by RF magnetron sputtering using a mixed gas of Ar and O2. The surface of the Al target was changed from the metallic mode to the oxide mode at a critical O2 flow ratio of 8%. The atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2 flow ratio. The oxide layer thickness formed on the Al target was estimated to be 5?7 nm at an O2 flow ratio of 100% by ellipsometry.", "subitem_description_type": "Abstract"}]}, "item_3_full_name_183": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "44879", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000020261399 ", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/d/nr/1000020261399 "}], "names": [{"name": "\u963f\u90e8, \u826f\u592b"}]}, {"nameIdentifiers": [{"nameIdentifier": "44880", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000070261401 ", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/d/nr/1000070261401 "}], "names": [{"name": "\u5ddd\u6751, \u307f\u3069\u308a"}]}]}, "item_3_publisher_212": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_3_relation_191": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://dx.doi.org/10.1016/j.vacuum.2008.04.012", "subitem_relation_type_select": "DOI"}}]}, "item_3_rights_192": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "c 2008 Elsevier"}]}, "item_3_select_195": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_3_subject_196": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "420", "subitem_subject_scheme": "NDC"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Chiba, Y"}], "nameIdentifiers": [{"nameIdentifier": "44637", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Abe, Y"}], "nameIdentifiers": [{"nameIdentifier": "44638", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawamura, M"}], "nameIdentifiers": [{"nameIdentifier": "44639", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sasaki, K"}], "nameIdentifiers": [{"nameIdentifier": "44640", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-12"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "No_4_Vacuum_83_483.pdf", "filesize": [{"value": "816.8 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 816800.0, "url": {"label": "No_4_Vacuum_83_483.pdf", "url": "https://kitami-it.repo.nii.ac.jp/record/8467/files/No_4_Vacuum_83_483.pdf"}, "version_id": "53d6a0d7-93c2-49b7-959e-f674c9125d55"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "Reactive sputtering", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Plasma emission intensity", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Target voltage", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Aluminum oxide", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Gettering effect", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Formation process of Al2O3 thin films by reactive sputtering", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Formation process of Al2O3 thin films by reactive sputtering"}]}, "item_type_id": "3", "owner": "1", "path": ["1"], "permalink_uri": "https://kitami-it.repo.nii.ac.jp/records/8467", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2016-09-08"}, "publish_date": "2016-09-08", "publish_status": "0", "recid": "8467", "relation": {}, "relation_version_is_last": true, "title": ["Formation process of Al2O3 thin films by reactive sputtering"], "weko_shared_id": 3}