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  1. 学術雑誌掲載済論文
  2. 和雑誌

Formation process of Al2O3 thin films by reactive sputtering

https://kitami-it.repo.nii.ac.jp/records/8467
43beaa14-7e64-4046-ad90-cdf73f9d4ac8
名前 / ファイル ライセンス アクション
No_4_Vacuum_83_483.pdf No_4_Vacuum_83_483.pdf (816.8 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-09-08
タイトル
言語 en
タイトル Formation process of Al2O3 thin films by reactive sputtering
言語
言語 eng
キーワード
主題Scheme Other
主題 Reactive sputtering
キーワード
主題Scheme Other
主題 Plasma emission intensity
キーワード
主題Scheme Other
主題 Target voltage
キーワード
主題Scheme Other
主題 Aluminum oxide
キーワード
主題Scheme Other
主題 Gettering effect
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
著者 Chiba, Y

× Chiba, Y

WEKO 44637

en Chiba, Y

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Abe, Y

× Abe, Y

WEKO 44638

en Abe, Y

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Kawamura, M

× Kawamura, M

WEKO 44639

en Kawamura, M

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Sasaki, K

× Sasaki, K

WEKO 44640

en Sasaki, K

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著者別名
姓名
姓名 阿部, 良夫
言語 ja
著者別名
姓名
姓名 川村, みどり
言語 ja
抄録
内容記述タイプ Abstract
内容記述 Al and Al2O3 films were deposited by RF magnetron sputtering using a mixed gas of Ar and O2. The surface of the Al target was changed from the metallic mode to the oxide mode at a critical O2 flow ratio of 8%. The atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2 flow ratio. The oxide layer thickness formed on the Al target was estimated to be 5?7 nm at an O2 flow ratio of 100% by ellipsometry.
書誌情報 Vacuum

巻 83, 号 3, p. 483-485, 発行日 2008-10
DOI
関連識別子
識別子タイプ DOI
関連識別子 https://doi.org/10.1016/j.vacuum.2008.04.012
権利
権利情報 c 2008 Elsevier
出版者
出版者 Elsevier
著者版フラグ
値 author
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
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