{"created":"2021-03-01T06:00:49.144584+00:00","id":8467,"links":{},"metadata":{"_buckets":{"deposit":"03ca7e36-ad49-4920-a2e9-26e2f6df9cfd"},"_deposit":{"created_by":188,"id":"8467","owners":[188],"pid":{"revision_id":0,"type":"depid","value":"8467"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00008467","sets":["1:86"]},"author_link":["44879","44880","44637","44638","44639","44640"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2008-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageEnd":"485","bibliographicPageStart":"483","bibliographicVolumeNumber":"83","bibliographic_titles":[{"bibliographic_title":"Vacuum"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Al and Al2O3 films were deposited by RF magnetron sputtering using a mixed gas of Ar and O2. The surface of the Al target was changed from the metallic mode to the oxide mode at a critical O2 flow ratio of 8%. The atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2 flow ratio. The oxide layer thickness formed on the Al target was estimated to be 5?7 nm at an O2 flow ratio of 100% by ellipsometry.","subitem_description_type":"Abstract"}]},"item_3_full_name_183":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44879","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20261399","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}],"names":[{"name":"阿部, 良夫","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"44880","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70261401","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000070261401 "}],"names":[{"name":"川村, みどり","nameLang":"ja"}]}]},"item_3_publisher_212":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_3_relation_191":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.vacuum.2008.04.012","subitem_relation_type_select":"DOI"}}]},"item_3_rights_192":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"c 2008 Elsevier"}]},"item_3_select_195":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author","subitem_select_language":"en"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Chiba, Y","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44637","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Abe, Y","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44638","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawamura, M","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44639","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, K","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44640","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-12"}],"displaytype":"detail","filename":"No_4_Vacuum_83_483.pdf","filesize":[{"value":"816.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"No_4_Vacuum_83_483.pdf","url":"https://kitami-it.repo.nii.ac.jp/record/8467/files/No_4_Vacuum_83_483.pdf"},"version_id":"53d6a0d7-93c2-49b7-959e-f674c9125d55"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Reactive sputtering","subitem_subject_scheme":"Other"},{"subitem_subject":"Plasma emission intensity","subitem_subject_scheme":"Other"},{"subitem_subject":"Target voltage","subitem_subject_scheme":"Other"},{"subitem_subject":"Aluminum oxide","subitem_subject_scheme":"Other"},{"subitem_subject":"Gettering effect","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Formation process of Al2O3 thin films by reactive sputtering","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Formation process of Al2O3 thin films by reactive sputtering","subitem_title_language":"en"}]},"item_type_id":"3","owner":"188","path":["86"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-09-08"},"publish_date":"2016-09-08","publish_status":"0","recid":"8467","relation_version_is_last":true,"title":["Formation process of Al2O3 thin films by reactive sputtering"],"weko_creator_id":"188","weko_shared_id":-1},"updated":"2025-01-16T00:43:52.389805+00:00"}