@article{oai:kitami-it.repo.nii.ac.jp:00008467,
 author = {Chiba, Y and Abe, Y and Kawamura, M and Sasaki, K},
 issue = {3},
 journal = {Vacuum},
 month = {Oct},
 note = {Al and Al2O3 films were deposited by RF magnetron sputtering using a mixed gas of Ar and O2. The surface of the Al target was changed from the metallic mode to the oxide mode at a critical O2 flow ratio of 8%. The atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2 flow ratio. The oxide layer thickness formed on the Al target was estimated to be 5?7 nm at an O2 flow ratio of 100% by ellipsometry.},
 pages = {483--485},
 title = {Formation process of Al2O3 thin films by reactive sputtering},
 volume = {83},
 year = {2008}
}