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Time-dependent variation of the target mode in reactive sputtering of Al-O_2 system
https://kitami-it.repo.nii.ac.jp/records/7615
https://kitami-it.repo.nii.ac.jp/records/7615992fe7af-052d-4f94-8149-863f1c194079
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
No277.pdf (267.0 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2014-02-25 | |||||||||||||||
| タイトル | ||||||||||||||||
| タイトル | Time-dependent variation of the target mode in reactive sputtering of Al-O_2 system | |||||||||||||||
| 言語 | en | |||||||||||||||
| 言語 | ||||||||||||||||
| 言語 | eng | |||||||||||||||
| キーワード | ||||||||||||||||
| 主題Scheme | Other | |||||||||||||||
| 主題 | gettering effect | |||||||||||||||
| キーワード | ||||||||||||||||
| 主題Scheme | Other | |||||||||||||||
| 主題 | target voltage | |||||||||||||||
| キーワード | ||||||||||||||||
| 主題Scheme | Other | |||||||||||||||
| 主題 | chamber pressure | |||||||||||||||
| 資源タイプ | ||||||||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||
| タイプ | journal article | |||||||||||||||
| アクセス権 | ||||||||||||||||
| アクセス権 | open access | |||||||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||||
| 著者 |
Abe, Yoshio
× Abe, Yoshio
× Shinya, Koji
× Chiba, Youjiro
× Kawamura, Midori
× Sasaki, Katsutaka
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| 抄録 | ||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||
| 内容記述 | Reactive sputtering techniques have been widely used for forming compound thin films. In this study, the time-dependent variation of the target mode of an Al-O_2 system was investigated by measuring the target voltage for various reactive O_2 gas flow ratios and presputtering (i.e., sputtering in pure Ar gas to clean the target surface) times. The Al target remains in metallic mode for a certain period of time after being exposed to an Ar-O_2 plasma before it begins to be oxidized. This period increases with decreasing O_2 flow ratio and with increasing the presputtering time. It is considered that the period is caused by the gettering of O_2 gas by Al films deposited on the substrate and the chamber wall during presputtering. | |||||||||||||||
| 抄録 | ||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||
| 内容記述 | target surface state | |||||||||||||||
| 書誌情報 |
Vacuum 巻 84, 号 12, p. 1365-1367, 発行日 2010-06 |
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| 出版者 | ||||||||||||||||
| 出版者 | Elsevier | |||||||||||||||
| 言語 | en | |||||||||||||||
| 著者版フラグ | ||||||||||||||||
| 言語 | en | |||||||||||||||
| 値 | author | |||||||||||||||
| 出版タイプ | ||||||||||||||||
| 出版タイプ | AM | |||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||||
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Cite as
Abe, Yoshio, Shinya, Koji, Chiba, Youjiro, Kawamura, Midori, Sasaki, Katsutaka, 2010, Time-dependent variation of the target mode in reactive sputtering of Al-O_2 system: Elsevier, 1365–1367 p.
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