| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2014-02-25 |
| タイトル |
|
|
タイトル |
Time-dependent variation of the target mode in reactive sputtering of Al-O_2 system |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
gettering effect |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
target voltage |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
chamber pressure |
| 資源タイプ |
|
|
資源 |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
Abe, Yoshio
Shinya, Koji
Chiba, Youjiro
Kawamura, Midori
Sasaki, Katsutaka
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Reactive sputtering techniques have been widely used for forming compound thin films. In this study, the time-dependent variation of the target mode of an Al-O_2 system was investigated by measuring the target voltage for various reactive O_2 gas flow ratios and presputtering (i.e., sputtering in pure Ar gas to clean the target surface) times. The Al target remains in metallic mode for a certain period of time after being exposed to an Ar-O_2 plasma before it begins to be oxidized. This period increases with decreasing O_2 flow ratio and with increasing the presputtering time. It is considered that the period is caused by the gettering of O_2 gas by Al films deposited on the substrate and the chamber wall during presputtering. |
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
target surface state |
| 書誌情報 |
Vacuum
巻 84,
号 12,
p. 1365-1367,
発行日 2010-06
|
| 出版者 |
|
|
出版者 |
Elsevier |
|
言語 |
en |
| 著者版フラグ |
|
|
言語 |
en |
|
値 |
author |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
No277.pdf (267.0 kB)
