@article{oai:kitami-it.repo.nii.ac.jp:00007615,
 author = {Abe, Yoshio and Shinya, Koji and Chiba, Youjiro and Kawamura, Midori and Sasaki, Katsutaka},
 issue = {12},
 journal = {Vacuum},
 month = {Jun},
 note = {Reactive sputtering techniques have been widely used for forming compound thin films. In this study, the time-dependent variation of the target mode of an Al-O_2 system was investigated by measuring the target voltage for various reactive O_2 gas flow ratios and presputtering (i.e., sputtering in pure Ar gas to clean the target surface) times. The Al target remains in metallic mode for a certain period of time after being exposed to an Ar-O_2 plasma before it begins to be oxidized. This period increases with decreasing O_2 flow ratio and with increasing the presputtering time. It is considered that the period is caused by the gettering of O_2 gas by Al films deposited on the substrate and the chamber wall during presputtering., target surface state},
 pages = {1365--1367},
 title = {Time-dependent variation of the target mode in reactive sputtering of Al-O_2 system},
 volume = {84},
 year = {2010}
}