| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2007-04-19 |
| タイトル |
|
|
タイトル |
Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源 |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
Takamura, K.
Abe, Y.
Sasaki, K.
|
| 著者別名 |
|
|
|
識別子Scheme |
WEKO |
|
|
識別子 |
44879 |
|
|
識別子Scheme |
KAKEN |
|
|
識別子URI |
https://nrid.nii.ac.jp/ja/nrid/1000020261399 |
|
|
識別子 |
20261399 |
|
|
姓名 |
阿部, 良夫 |
|
|
言語 |
ja |
| 著者別名 |
|
|
|
識別子Scheme |
WEKO |
|
|
識別子 |
34942 |
|
|
姓名 |
佐々木, 克孝 |
|
|
言語 |
ja |
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Ti and TiO_2 films were deposited by RF reactive sputtering using a mixed gas of Ar and O_2. TiO_2 films were found to be formed at oxygen flow ratios above 7%. At the critical O_2 flow ratio, the amount of supplied Ti atoms was found to agree with that of O_2 molecules. Above the critical O_2 flow ratio, the amount of supplied O_2 molecules exceeded the gettering effect of the sputtering Ti atoms and oxygen density in the plasma began to increase. As a result, the surface of the Ti target was oxidized and TiO_2 films were formed. The thickness of the oxide film formed on the Ti target increased with increasing oxygen flow ratio and a maximum thickness of 5-6 nm was obtained at oxygen flow ratios of 40-100%. |
| 書誌情報 |
Vacuum
巻 74,
号 3-4,
p. 397-401,
発行日 2004-06
|
| DOI |
|
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|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://doi.org/10.1016/j.vacuum.2004.01.006 |
| 権利 |
|
|
権利情報 |
http://www.sciencedirect.com/science/journal/0042207X |
| 権利 |
|
|
権利情報 |
Elsevier Ltd., K. Takamura, Y. Abe and K. Sasaki, Vacuum, 74(3-4), 2004, 397-401. |
| フォーマット |
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|
内容記述タイプ |
Other |
|
内容記述 |
application/pdf |
| 出版者 |
|
|
出版者 |
Elsevier |
|
言語 |
en |
| 著者版フラグ |
|
|
言語 |
en |
|
値 |
author |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
4655.pdf (7.6 MB)
