@article{oai:kitami-it.repo.nii.ac.jp:00006906,
 author = {Takamura, K. and Abe, Y. and Sasaki, K.},
 issue = {3-4},
 journal = {Vacuum},
 month = {Jun},
 note = {Ti and TiO_2 films were deposited by RF reactive sputtering using a mixed gas of Ar and O_2. TiO_2 films were found to be formed at oxygen flow ratios above 7%. At the critical O_2 flow ratio, the amount of supplied Ti atoms was found to agree with that of O_2 molecules. Above the critical O_2 flow ratio, the amount of supplied O_2 molecules exceeded the gettering effect of the sputtering Ti atoms and oxygen density in the plasma began to increase. As a result, the surface of the Ti target was oxidized and TiO_2 films were formed. The thickness of the oxide film formed on the Ti target increased with increasing oxygen flow ratio and a maximum thickness of 5-6 nm was obtained at oxygen flow ratios of 40-100%., application/pdf},
 pages = {397--401},
 title = {Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering},
 volume = {74},
 year = {2004}
}