{"created":"2021-03-01T05:59:20.972394+00:00","id":6906,"links":{},"metadata":{"_buckets":{"deposit":"7ff9c275-a274-4a56-afd6-ce7d7f23e749"},"_deposit":{"id":"6906","owners":[],"pid":{"revision_id":0,"type":"depid","value":"6906"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00006906","sets":["1:87"]},"author_link":["44879","34942","34938","34939","34940"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-06","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3-4","bibliographicPageEnd":"401","bibliographicPageStart":"397","bibliographicVolumeNumber":"74","bibliographic_titles":[{"bibliographic_title":"Vacuum"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ti and TiO_2 films were deposited by RF reactive sputtering using a mixed gas of Ar and O_2. TiO_2 films were found to be formed at oxygen flow ratios above 7%. At the critical O_2 flow ratio, the amount of supplied Ti atoms was found to agree with that of O_2 molecules. Above the critical O_2 flow ratio, the amount of supplied O_2 molecules exceeded the gettering effect of the sputtering Ti atoms and oxygen density in the plasma began to increase. As a result, the surface of the Ti target was oxidized and TiO_2 films were formed. The thickness of the oxide film formed on the Ti target increased with increasing oxygen flow ratio and a maximum thickness of 5-6 nm was obtained at oxygen flow ratios of 40-100%.","subitem_description_type":"Abstract"}]},"item_3_description_194":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_full_name_183":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44879","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20261399","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}],"names":[{"name":"阿部, 良夫","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"34942","nameIdentifierScheme":"WEKO"}],"names":[{"name":"佐々木, 克孝","nameLang":"ja"}]}]},"item_3_publisher_212":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_3_relation_191":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://doi.org/10.1016/j.vacuum.2004.01.006","subitem_relation_type_select":"DOI"}}]},"item_3_rights_192":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"http://www.sciencedirect.com/science/journal/0042207X"},{"subitem_rights":"Elsevier Ltd., K. Takamura, Y. Abe and K. Sasaki, Vacuum, 74(3-4), 2004, 397-401."}]},"item_3_select_195":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takamura, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Abe, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Sasaki, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-11-22"}],"displaytype":"detail","filename":"4655.pdf","filesize":[{"value":"7.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"4655.pdf","url":"https://kitami-it.repo.nii.ac.jp/record/6906/files/4655.pdf"},"version_id":"cc0f5928-1cd4-40f9-8375-3efaf29cf4bc"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["87"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-04-19"},"publish_date":"2007-04-19","publish_status":"0","recid":"6906","relation_version_is_last":true,"title":["Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-13T02:24:54.652014+00:00"}