{"_buckets": {"deposit": "6fab66fc-a74e-4c47-8784-4cccf8ccdad4"}, "_deposit": {"id": "6902", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "6902"}, "status": "published"}, "_oai": {"id": "oai:kitami-it.repo.nii.ac.jp:00006902", "sets": ["1:87"]}, "author_link": ["44880", "44879", "34918", "34912", "34913", "34914", "34915"], "item_1646810750418": {"attribute_name": "\u51fa\u7248\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_3_biblio_info_186": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2005-12", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "3-4", "bibliographicPageEnd": "282", "bibliographicPageStart": "277", "bibliographicVolumeNumber": "82", "bibliographic_titles": [{"bibliographic_title": "Microelectronic Engineering"}]}]}, "item_3_description_184": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Ag and Ag-Ni films (Ni: 0.6, 2.0 and 4.8 at.%) with a thickness of 95 nm were deposited on SiO_2/Si substrates and the thermal stability of the films was evaluated. The films were annealed at temperatures from 500 to 700\u2103 for 1 hour in vacuum. The as-deposited Ag and Ag-Ni films had a smooth surface. The Ag-Ni films had an electrical resistivity higher than that of the Ag film because of the impurity scattering effect. However, the resistivity of Ag-Ni films decreased until 600\u2103 by annealing. As the morphological change after annealing, void formation was observed for the Ag film at 500\u2103. Then after the annealing at 600\u2103, agglomeration with a partly uncovered substrate was clearly observed for the Ag film. On the other hand, void formation was also observed for the Ag-Ni films at 600\u2103. Further annealing at 650\u2103 caused agglomeration of the Ag-Ni films with an increase in their resistivity. Due to the insolubility of Ni into Ag, small islands of Ni appeared at this temperature. Consequently, Ag-Ni films are useful suppressing agglomeration up to the annealing temperature of 600\u2103. The resistivity of the Ag-Ni (0.6 at.%) film was 2.1-2.4\u03bc\u03a9cm after annealing from 400\u2103 to 550\u2103 comparable with that of the Ag film (1.9-2.2\u03bc\u03a9cm) and it remained low, though that of the pure Ag film increased significantly at 600\u2103.", "subitem_description_type": "Abstract"}]}, "item_3_description_194": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_3_full_name_183": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "44880", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "70261401", "nameIdentifierScheme": "KAKEN", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000070261401 "}], "names": [{"name": "\u5ddd\u6751, \u307f\u3069\u308a", "nameLang": "ja"}]}, {"nameIdentifiers": [{"nameIdentifier": "44879", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "20261399", "nameIdentifierScheme": "KAKEN", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}], "names": [{"name": "\u963f\u90e8, \u826f\u592b", "nameLang": "ja"}]}, {"nameIdentifiers": [{"nameIdentifier": "34918", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "\u4f50\u3005\u6728, \u514b\u5b5d", "nameLang": "ja"}]}]}, "item_3_publisher_212": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_3_relation_191": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://doi.org/10.1016/j.mee.2005.07.035", "subitem_relation_type_select": "DOI"}}]}, "item_3_rights_192": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "http://www.sciencedirect.com/science/journal/01679317"}, {"subitem_rights": "Elsevier B.V., M. Kawamura, M. Yamaguchi, Y. Abe and K. Sasaki, Microelectronic Engineering, 82(3-4), 2005, 277-282."}]}, "item_3_select_195": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_3_subject_196": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "549.8", "subitem_subject_scheme": "NDC"}]}, "item_access_right": {"attribute_name": "\u30a2\u30af\u30bb\u30b9\u6a29", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kawamura, M.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "34912", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Yamaguchi, M.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "34913", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Abe, Y.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "34914", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sasaki, K.", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "34915", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-11-22"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "4442.pdf", "filesize": [{"value": "1.4 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 1400000.0, "url": {"label": "4442.pdf", "url": "https://kitami-it.repo.nii.ac.jp/record/6902/files/4442.pdf"}, "version_id": "861859b9-c2b5-41de-9759-240adcd85f68"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Electrical and morphological change of Ag-Ni films by annealing in vacuum", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Electrical and morphological change of Ag-Ni films by annealing in vacuum", "subitem_title_language": "en"}]}, "item_type_id": "3", "owner": "1", "path": ["1/87"], "permalink_uri": "https://kitami-it.repo.nii.ac.jp/records/6902", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2007-04-19"}, "publish_date": "2007-04-19", "publish_status": "0", "recid": "6902", "relation": {}, "relation_version_is_last": true, "title": ["Electrical and morphological change of Ag-Ni films by annealing in vacuum"], "weko_shared_id": -1}