| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2007-04-19 |
| タイトル |
|
|
タイトル |
Electrical and morphological change of Ag-Ni films by annealing in vacuum |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源 |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
Kawamura, M.
Yamaguchi, M.
Abe, Y.
Sasaki, K.
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Ag and Ag-Ni films (Ni: 0.6, 2.0 and 4.8 at.%) with a thickness of 95 nm were deposited on SiO_2/Si substrates and the thermal stability of the films was evaluated. The films were annealed at temperatures from 500 to 700℃ for 1 hour in vacuum. The as-deposited Ag and Ag-Ni films had a smooth surface. The Ag-Ni films had an electrical resistivity higher than that of the Ag film because of the impurity scattering effect. However, the resistivity of Ag-Ni films decreased until 600℃ by annealing. As the morphological change after annealing, void formation was observed for the Ag film at 500℃. Then after the annealing at 600℃, agglomeration with a partly uncovered substrate was clearly observed for the Ag film. On the other hand, void formation was also observed for the Ag-Ni films at 600℃. Further annealing at 650℃ caused agglomeration of the Ag-Ni films with an increase in their resistivity. Due to the insolubility of Ni into Ag, small islands of Ni appeared at this temperature. Consequently, Ag-Ni films are useful suppressing agglomeration up to the annealing temperature of 600℃. The resistivity of the Ag-Ni (0.6 at.%) film was 2.1-2.4μΩcm after annealing from 400℃ to 550℃ comparable with that of the Ag film (1.9-2.2μΩcm) and it remained low, though that of the pure Ag film increased significantly at 600℃. |
| 書誌情報 |
Microelectronic Engineering
巻 82,
号 3-4,
p. 277-282,
発行日 2005-12
|
| DOI |
|
|
|
識別子タイプ |
DOI |
|
|
関連識別子 |
http://doi.org/10.1016/j.mee.2005.07.035 |
| 権利 |
|
|
権利情報 |
http://www.sciencedirect.com/science/journal/01679317 |
| 権利 |
|
|
権利情報 |
Elsevier B.V., M. Kawamura, M. Yamaguchi, Y. Abe and K. Sasaki, Microelectronic Engineering, 82(3-4), 2005, 277-282. |
| フォーマット |
|
|
内容記述タイプ |
Other |
|
内容記述 |
application/pdf |
| 出版者 |
|
|
出版者 |
Elsevier |
|
言語 |
en |
| 著者版フラグ |
|
|
言語 |
en |
|
値 |
author |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
4442.pdf (1.4 MB)
