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Electrical and morphological change of Ag-Ni films by annealing in vacuum
https://kitami-it.repo.nii.ac.jp/records/6902
https://kitami-it.repo.nii.ac.jp/records/6902e2b1ffcf-12e3-4796-9fab-0d31b5d23ecf
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
4442.pdf (1.4 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-04-19 | |||||
| タイトル | ||||||
| タイトル | Electrical and morphological change of Ag-Ni films by annealing in vacuum | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 著者 |
Kawamura, M.
× Kawamura, M.× Yamaguchi, M.× Abe, Y.× Sasaki, K. |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44880 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000070261401 | |||||
| 識別子 | 70261401 | |||||
| 姓名 | 川村, みどり | |||||
| 言語 | ja | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44879 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000020261399 | |||||
| 識別子 | 20261399 | |||||
| 姓名 | 阿部, 良夫 | |||||
| 言語 | ja | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 34918 | |||||
| 姓名 | 佐々木, 克孝 | |||||
| 言語 | ja | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Ag and Ag-Ni films (Ni: 0.6, 2.0 and 4.8 at.%) with a thickness of 95 nm were deposited on SiO_2/Si substrates and the thermal stability of the films was evaluated. The films were annealed at temperatures from 500 to 700℃ for 1 hour in vacuum. The as-deposited Ag and Ag-Ni films had a smooth surface. The Ag-Ni films had an electrical resistivity higher than that of the Ag film because of the impurity scattering effect. However, the resistivity of Ag-Ni films decreased until 600℃ by annealing. As the morphological change after annealing, void formation was observed for the Ag film at 500℃. Then after the annealing at 600℃, agglomeration with a partly uncovered substrate was clearly observed for the Ag film. On the other hand, void formation was also observed for the Ag-Ni films at 600℃. Further annealing at 650℃ caused agglomeration of the Ag-Ni films with an increase in their resistivity. Due to the insolubility of Ni into Ag, small islands of Ni appeared at this temperature. Consequently, Ag-Ni films are useful suppressing agglomeration up to the annealing temperature of 600℃. The resistivity of the Ag-Ni (0.6 at.%) film was 2.1-2.4μΩcm after annealing from 400℃ to 550℃ comparable with that of the Ag film (1.9-2.2μΩcm) and it remained low, though that of the pure Ag film increased significantly at 600℃. | |||||
| 書誌情報 |
Microelectronic Engineering 巻 82, 号 3-4, p. 277-282, 発行日 2005-12 |
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| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | http://doi.org/10.1016/j.mee.2005.07.035 | |||||
| 権利 | ||||||
| 権利情報 | http://www.sciencedirect.com/science/journal/01679317 | |||||
| 権利 | ||||||
| 権利情報 | Elsevier B.V., M. Kawamura, M. Yamaguchi, Y. Abe and K. Sasaki, Microelectronic Engineering, 82(3-4), 2005, 277-282. | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 出版者 | ||||||
| 出版者 | Elsevier | |||||
| 著者版フラグ | ||||||
| 値 | author | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
