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  1. 学術雑誌掲載済論文
  2. 洋雑誌

Electrical and morphological change of Ag-Ni films by annealing in vacuum

https://kitami-it.repo.nii.ac.jp/records/6902
e2b1ffcf-12e3-4796-9fab-0d31b5d23ecf
名前 / ファイル ライセンス アクション
4442.pdf 4442.pdf (1.4 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2007-04-19
タイトル
言語 en
タイトル Electrical and morphological change of Ag-Ni films by annealing in vacuum
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
著者 Kawamura, M.

× Kawamura, M.

WEKO 34912

en Kawamura, M.

Search repository
Yamaguchi, M.

× Yamaguchi, M.

WEKO 34913

en Yamaguchi, M.

Search repository
Abe, Y.

× Abe, Y.

WEKO 34914

en Abe, Y.

Search repository
Sasaki, K.

× Sasaki, K.

WEKO 34915

en Sasaki, K.

Search repository
著者別名
姓名
姓名 川村, みどり
言語 ja
著者別名
姓名
姓名 阿部, 良夫
言語 ja
著者別名
姓名
姓名 佐々木, 克孝
言語 ja
抄録
内容記述タイプ Abstract
内容記述 Ag and Ag-Ni films (Ni: 0.6, 2.0 and 4.8 at.%) with a thickness of 95 nm were deposited on SiO_2/Si substrates and the thermal stability of the films was evaluated. The films were annealed at temperatures from 500 to 700℃ for 1 hour in vacuum. The as-deposited Ag and Ag-Ni films had a smooth surface. The Ag-Ni films had an electrical resistivity higher than that of the Ag film because of the impurity scattering effect. However, the resistivity of Ag-Ni films decreased until 600℃ by annealing. As the morphological change after annealing, void formation was observed for the Ag film at 500℃. Then after the annealing at 600℃, agglomeration with a partly uncovered substrate was clearly observed for the Ag film. On the other hand, void formation was also observed for the Ag-Ni films at 600℃. Further annealing at 650℃ caused agglomeration of the Ag-Ni films with an increase in their resistivity. Due to the insolubility of Ni into Ag, small islands of Ni appeared at this temperature. Consequently, Ag-Ni films are useful suppressing agglomeration up to the annealing temperature of 600℃. The resistivity of the Ag-Ni (0.6 at.%) film was 2.1-2.4μΩcm after annealing from 400℃ to 550℃ comparable with that of the Ag film (1.9-2.2μΩcm) and it remained low, though that of the pure Ag film increased significantly at 600℃.
書誌情報 Microelectronic Engineering

巻 82, 号 3-4, p. 277-282, 発行日 2005-12
DOI
関連識別子
識別子タイプ DOI
関連識別子 http://doi.org/10.1016/j.mee.2005.07.035
権利
権利情報 http://www.sciencedirect.com/science/journal/01679317
権利
権利情報 Elsevier B.V., M. Kawamura, M. Yamaguchi, Y. Abe and K. Sasaki, Microelectronic Engineering, 82(3-4), 2005, 277-282.
フォーマット
内容記述タイプ Other
内容記述 application/pdf
出版者
出版者 Elsevier
著者版フラグ
値 author
出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
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