@article{oai:kitami-it.repo.nii.ac.jp:00006902,
 author = {Kawamura, M. and Yamaguchi, M. and Abe, Y. and Sasaki, K.},
 issue = {3-4},
 journal = {Microelectronic Engineering},
 month = {Dec},
 note = {Ag and Ag-Ni films (Ni: 0.6, 2.0 and 4.8 at.%) with a thickness of 95 nm were deposited on SiO_2/Si substrates and the thermal stability of the films was evaluated. The films were annealed at temperatures from 500 to 700℃ for 1 hour in vacuum. The as-deposited Ag and Ag-Ni films had a smooth surface. The Ag-Ni films had an electrical resistivity higher than that of the Ag film because of the impurity scattering effect. However, the resistivity of Ag-Ni films decreased until 600℃ by annealing. As the morphological change after annealing, void formation was observed for the Ag film at 500℃. Then after the annealing at 600℃, agglomeration with a partly uncovered substrate was clearly observed for the Ag film. On the other hand, void formation was also observed for the Ag-Ni films at 600℃. Further annealing at 650℃ caused agglomeration of the Ag-Ni films with an increase in their resistivity. Due to the insolubility of Ni into Ag, small islands of Ni appeared at this temperature. Consequently, Ag-Ni films are useful suppressing agglomeration up to the annealing temperature of 600℃. The resistivity of the Ag-Ni (0.6 at.%) film was 2.1-2.4μΩcm after annealing from 400℃ to 550℃ comparable with that of the Ag film (1.9-2.2μΩcm) and it remained low, though that of the pure Ag film increased significantly at 600℃., application/pdf},
 pages = {277--282},
 title = {Electrical and morphological change of Ag-Ni films by annealing in vacuum},
 volume = {82},
 year = {2005}
}