{"created":"2021-03-01T05:59:20.731661+00:00","id":6902,"links":{},"metadata":{"_buckets":{"deposit":"6fab66fc-a74e-4c47-8784-4cccf8ccdad4"},"_deposit":{"id":"6902","owners":[],"pid":{"revision_id":0,"type":"depid","value":"6902"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00006902","sets":["1:87"]},"author_link":["44880","44879","34918","34912","34913","34914","34915"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3-4","bibliographicPageEnd":"282","bibliographicPageStart":"277","bibliographicVolumeNumber":"82","bibliographic_titles":[{"bibliographic_title":"Microelectronic Engineering"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ag and Ag-Ni films (Ni: 0.6, 2.0 and 4.8 at.%) with a thickness of 95 nm were deposited on SiO_2/Si substrates and the thermal stability of the films was evaluated. The films were annealed at temperatures from 500 to 700℃ for 1 hour in vacuum. The as-deposited Ag and Ag-Ni films had a smooth surface. The Ag-Ni films had an electrical resistivity higher than that of the Ag film because of the impurity scattering effect. However, the resistivity of Ag-Ni films decreased until 600℃ by annealing. As the morphological change after annealing, void formation was observed for the Ag film at 500℃. Then after the annealing at 600℃, agglomeration with a partly uncovered substrate was clearly observed for the Ag film. On the other hand, void formation was also observed for the Ag-Ni films at 600℃. Further annealing at 650℃ caused agglomeration of the Ag-Ni films with an increase in their resistivity. Due to the insolubility of Ni into Ag, small islands of Ni appeared at this temperature. Consequently, Ag-Ni films are useful suppressing agglomeration up to the annealing temperature of 600℃. The resistivity of the Ag-Ni (0.6 at.%) film was 2.1-2.4μΩcm after annealing from 400℃ to 550℃ comparable with that of the Ag film (1.9-2.2μΩcm) and it remained low, though that of the pure Ag film increased significantly at 600℃.","subitem_description_type":"Abstract"}]},"item_3_description_194":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_3_full_name_183":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44880","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70261401","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000070261401 "}],"names":[{"name":"川村, みどり","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"44879","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20261399","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}],"names":[{"name":"阿部, 良夫","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"34918","nameIdentifierScheme":"WEKO"}],"names":[{"name":"佐々木, 克孝","nameLang":"ja"}]}]},"item_3_publisher_212":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_3_relation_191":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://doi.org/10.1016/j.mee.2005.07.035","subitem_relation_type_select":"DOI"}}]},"item_3_rights_192":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"http://www.sciencedirect.com/science/journal/01679317"},{"subitem_rights":"Elsevier B.V., M. Kawamura, M. Yamaguchi, Y. Abe and K. Sasaki, Microelectronic Engineering, 82(3-4), 2005, 277-282."}]},"item_3_select_195":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kawamura, M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"34912","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamaguchi, M.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"34913","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Abe, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"34914","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"34915","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-11-22"}],"displaytype":"detail","filename":"4442.pdf","filesize":[{"value":"1.4 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"4442.pdf","url":"https://kitami-it.repo.nii.ac.jp/record/6902/files/4442.pdf"},"version_id":"861859b9-c2b5-41de-9759-240adcd85f68"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Electrical and morphological change of Ag-Ni films by annealing in vacuum","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Electrical and morphological change of Ag-Ni films by annealing in vacuum","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["87"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-04-19"},"publish_date":"2007-04-19","publish_status":"0","recid":"6902","relation_version_is_last":true,"title":["Electrical and morphological change of Ag-Ni films by annealing in vacuum"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2024-06-03T02:11:57.803693+00:00"}