ログイン
言語:

WEKO3

  • トップ
  • コミュニティ
  • ランキング
AND
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "9a10f598-9d8c-4809-861a-e97715cb9cdb"}, "_deposit": {"id": "8482", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "8482"}, "status": "published"}, "_oai": {"id": "oai:kitami-it.repo.nii.ac.jp:00008482", "sets": ["1:87"]}, "author_link": ["44878", "44879", "44880", "44744", "44745", "44746", "44747", "44748"], "item_1646810750418": {"attribute_name": "\u51fa\u7248\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_970fb48d4fbd8a85", "subitem_version_type": "VoR"}]}, "item_3_biblio_info_186": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2013", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2013", "bibliographicPageEnd": "5190", "bibliographicPageStart": "5183", "bibliographicVolumeNumber": "8", "bibliographic_titles": [{"bibliographic_title": "Int. J. Electrochem. Sci.", "bibliographic_titleLang": "en"}]}]}, "item_3_description_184": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The effects of a Ga-doped ZnO passivation layer between a TiO2 photoelectrode and an indium tin oxide (ITO) electrode on the performance of dye-sensitized solar cells (DSSCs) were investigated. It was found that the orientation, surface morphology, and resistivity of the ZnO thin films prepared by sol-gel solution strongly depended on the film thickness and the Ga doping amounts. The transmission of the ZnO films was very high (over 92 %) in the visible region for all the films. These properties are strongly related to the photovoltaic characteristics of DSSCs. With an optimized ZnO passivation layer, the cells showed significantly improved characteristics because of the suppression of interfacial recombination, which in turn led to improved efficiency. The cell with a 12-nm-thick Ga-doped ZnO (1.5 at.%) thin film showed a short-circuit current density (JSC) of 18.97 mA/cm2, an open-circuit voltage (VOC) of 0.69 V, a fill factor (FF) of 0.60, and a power conversion efficiency (PCE, ?) of 7.85% under AM 1.5G illumination of 100 mW/cm2.", "subitem_description_type": "Abstract"}]}, "item_3_description_185": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "Open Access authors retain the copyrights of their papers, and all open access articles are distributed under the terms of the Creative Commons Attribution 4.0 International License.", "subitem_description_type": "Other"}]}, "item_3_full_name_183": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "44878", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "70608471", "nameIdentifierScheme": "KAKEN", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000070608471 "}], "names": [{"name": "\u91d1, \u656c\u93ac", "nameLang": "ja"}]}, {"nameIdentifiers": [{"nameIdentifier": "44879", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "20261399", "nameIdentifierScheme": "KAKEN", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}], "names": [{"name": "\u963f\u90e8, \u826f\u592b", "nameLang": "ja"}]}, {"nameIdentifiers": [{"nameIdentifier": "44880", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "70261401", "nameIdentifierScheme": "KAKEN", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000070261401 "}], "names": [{"name": "\u5ddd\u6751, \u307f\u3069\u308a", "nameLang": "ja"}]}]}, "item_3_publisher_212": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Electrochemical Science Group\uff08ESG\uff09"}]}, "item_3_rights_192": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "c 2013 by ESG"}]}, "item_3_select_195": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_3_subject_196": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "430", "subitem_subject_scheme": "NDC"}]}, "item_access_right": {"attribute_name": "\u30a2\u30af\u30bb\u30b9\u6a29", "attribute_value_mlt": [{"subitem_access_right": "open access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_abf2"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Kim, Kyung Ho", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "44744", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Utashiro, Kazuomi", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "44745", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Jin, Zhuguang", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "44746", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Abe, Yoshio", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "44747", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawamura, Midori", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "44748", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-12"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "80405183.pdf", "filesize": [{"value": "550.4 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_note", "mimetype": "application/pdf", "size": 550400.0, "url": {"label": "80405183.pdf", "url": "https://kitami-it.repo.nii.ac.jp/record/8482/files/80405183.pdf"}, "version_id": "cf831376-29e3-40cf-83be-b015fcf46e1b"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "Dye-sensitized solar cells", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ZnO", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Thickness", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Ga dopant", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Efficiency", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer", "subitem_title_language": "en"}]}, "item_type_id": "3", "owner": "1", "path": ["1/87"], "permalink_uri": "https://kitami-it.repo.nii.ac.jp/records/8482", "pubdate": {"attribute_name": "PubDate", "attribute_value": "2016-11-11"}, "publish_date": "2016-11-11", "publish_status": "0", "recid": "8482", "relation": {}, "relation_version_is_last": true, "title": ["Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer"], "weko_shared_id": -1}
  1. 学術雑誌掲載済論文
  2. 洋雑誌

Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer

https://kitami-it.repo.nii.ac.jp/records/8482
c4ef3aaf-c043-428b-a8c0-c15f8781c3da
名前 / ファイル ライセンス アクション
80405183.pdf 80405183.pdf (550.4 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2016-11-11
タイトル
言語 en
タイトル Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer
言語
言語 eng
キーワード
主題Scheme Other
主題 Dye-sensitized solar cells
キーワード
主題Scheme Other
主題 ZnO
キーワード
主題Scheme Other
主題 Thickness
キーワード
主題Scheme Other
主題 Ga dopant
キーワード
主題Scheme Other
主題 Efficiency
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
著者 Kim, Kyung Ho

× Kim, Kyung Ho

WEKO 44744

en Kim, Kyung Ho

Search repository
Utashiro, Kazuomi

× Utashiro, Kazuomi

WEKO 44745

en Utashiro, Kazuomi

Search repository
Jin, Zhuguang

× Jin, Zhuguang

WEKO 44746

en Jin, Zhuguang

Search repository
Abe, Yoshio

× Abe, Yoshio

WEKO 44747

en Abe, Yoshio

Search repository
Kawamura, Midori

× Kawamura, Midori

WEKO 44748

en Kawamura, Midori

Search repository
著者別名
姓名
姓名 金, 敬鎬
言語 ja
著者別名
姓名
姓名 阿部, 良夫
言語 ja
著者別名
姓名
姓名 川村, みどり
言語 ja
抄録
内容記述タイプ Abstract
内容記述 The effects of a Ga-doped ZnO passivation layer between a TiO2 photoelectrode and an indium tin oxide (ITO) electrode on the performance of dye-sensitized solar cells (DSSCs) were investigated. It was found that the orientation, surface morphology, and resistivity of the ZnO thin films prepared by sol-gel solution strongly depended on the film thickness and the Ga doping amounts. The transmission of the ZnO films was very high (over 92 %) in the visible region for all the films. These properties are strongly related to the photovoltaic characteristics of DSSCs. With an optimized ZnO passivation layer, the cells showed significantly improved characteristics because of the suppression of interfacial recombination, which in turn led to improved efficiency. The cell with a 12-nm-thick Ga-doped ZnO (1.5 at.%) thin film showed a short-circuit current density (JSC) of 18.97 mA/cm2, an open-circuit voltage (VOC) of 0.69 V, a fill factor (FF) of 0.60, and a power conversion efficiency (PCE, ?) of 7.85% under AM 1.5G illumination of 100 mW/cm2.
内容記述
内容記述タイプ Other
内容記述 Open Access authors retain the copyrights of their papers, and all open access articles are distributed under the terms of the Creative Commons Attribution 4.0 International License.
書誌情報 en : Int. J. Electrochem. Sci.

巻 8, 号 2013, p. 5183-5190, 発行日 2013
権利
権利情報 c 2013 by ESG
出版者
出版者 Electrochemical Science Group(ESG)
著者版フラグ
値 publisher
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 06:34:13.472937
Show All versions

Share

Mendeley CiteULike Twitter Facebook Print Addthis

Cite as

Export

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by CERN Data Centre & Invenio


Powered by CERN Data Centre & Invenio