{"created":"2021-03-01T06:00:50.044394+00:00","id":8482,"links":{},"metadata":{"_buckets":{"deposit":"9a10f598-9d8c-4809-861a-e97715cb9cdb"},"_deposit":{"id":"8482","owners":[],"pid":{"revision_id":0,"type":"depid","value":"8482"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00008482","sets":["1:87"]},"author_link":["44878","44879","44880","44744","44745","44746","44747","44748"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2013","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2013","bibliographicPageEnd":"5190","bibliographicPageStart":"5183","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"Int. J. Electrochem. Sci.","bibliographic_titleLang":"en"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The effects of a Ga-doped ZnO passivation layer between a TiO2 photoelectrode and an indium tin oxide (ITO) electrode on the performance of dye-sensitized solar cells (DSSCs) were investigated. It was found that the orientation, surface morphology, and resistivity of the ZnO thin films prepared by sol-gel solution strongly depended on the film thickness and the Ga doping amounts. The transmission of the ZnO films was very high (over 92 %) in the visible region for all the films. These properties are strongly related to the photovoltaic characteristics of DSSCs. With an optimized ZnO passivation layer, the cells showed significantly improved characteristics because of the suppression of interfacial recombination, which in turn led to improved efficiency. The cell with a 12-nm-thick Ga-doped ZnO (1.5 at.%) thin film showed a short-circuit current density (JSC) of 18.97 mA/cm2, an open-circuit voltage (VOC) of 0.69 V, a fill factor (FF) of 0.60, and a power conversion efficiency (PCE, ?) of 7.85% under AM 1.5G illumination of 100 mW/cm2.","subitem_description_type":"Abstract"}]},"item_3_description_185":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Open Access authors retain the copyrights of their papers, and all open access articles are distributed under the terms of the Creative Commons Attribution 4.0 International License.","subitem_description_type":"Other"}]},"item_3_full_name_183":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44878","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70608471","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000070608471 "}],"names":[{"name":"金, 敬鎬","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"44879","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20261399","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}],"names":[{"name":"阿部, 良夫","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"44880","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70261401","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000070261401 "}],"names":[{"name":"川村, みどり","nameLang":"ja"}]}]},"item_3_publisher_212":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Electrochemical Science Group（ESG）"}]},"item_3_rights_192":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"c 2013 by ESG"}]},"item_3_select_195":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kim, Kyung Ho","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Utashiro, Kazuomi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jin, Zhuguang","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Abe, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawamura, Midori","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-12"}],"displaytype":"detail","filename":"80405183.pdf","filesize":[{"value":"550.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"80405183.pdf","url":"https://kitami-it.repo.nii.ac.jp/record/8482/files/80405183.pdf"},"version_id":"cf831376-29e3-40cf-83be-b015fcf46e1b"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Dye-sensitized solar cells","subitem_subject_scheme":"Other"},{"subitem_subject":"ZnO","subitem_subject_scheme":"Other"},{"subitem_subject":"Thickness","subitem_subject_scheme":"Other"},{"subitem_subject":"Ga dopant","subitem_subject_scheme":"Other"},{"subitem_subject":"Efficiency","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["87"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-11-11"},"publish_date":"2016-11-11","publish_status":"0","recid":"8482","relation_version_is_last":true,"title":["Dye-Sensitized Solar Cells with Sol-Gel Solution Processed Ga-Doped ZnO Passivation Layer"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2022-12-13T02:22:02.921013+00:00"}