{"_buckets": {"deposit": "e2fa1a7f-d470-414e-89ef-833dfbda8f2e"}, "_deposit": {"id": "8472", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "8472"}, "status": "published"}, "_oai": {"id": "oai:kitami-it.repo.nii.ac.jp:00008472", "sets": ["1"]}, "item_3_biblio_info_186": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2007", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "10A", "bibliographicPageEnd": "6781", "bibliographicPageStart": "6778", "bibliographicVolumeNumber": "46", "bibliographic_titles": [{"bibliographic_title": "Japanese Journal of Applied Physics"}]}]}, "item_3_description_184": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "Reactive sputtering is a very useful and widely used technique for preparing compound thin films, however, the target surface state is not fully understood. In this study, a Si wafer was used as a model sputtering target, and the thickness of the oxide and nitride layers formed on the target surface after sputtering in Ar+O2 and Ar+N2 mixed gases, respectively, was measured by ellipsometry. The maximum thicknesses of oxide and nitride layers were found to be approximately 7 nm in pure O2 gas and 4 nm in pure N2 gas, respectively. The oxidation rate of Si in oxygen plasma was thought to be higher than the nitridation rate of Si in nitrogen plasma.", "subitem_description_type": "Abstract"}]}, "item_3_full_name_183": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "44879", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000020261399 ", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/d/nr/1000020261399 "}], "names": [{"name": "\u963f\u90e8, \u826f\u592b"}]}, {"nameIdentifiers": [{"nameIdentifier": "44880", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1000070261401 ", "nameIdentifierScheme": "NRID", "nameIdentifierURI": "http://rns.nii.ac.jp/d/nr/1000070261401 "}], "names": [{"name": "\u5ddd\u6751, \u307f\u3069\u308a"}]}]}, "item_3_publisher_212": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "The Japan Society of Applied Physics"}]}, "item_3_rights_192": {"attribute_name": "\u6a29\u5229", "attribute_value_mlt": [{"subitem_rights": "c 2007 The Japan Society of Applied Physics"}]}, "item_3_select_195": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_3_subject_196": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "420", "subitem_subject_scheme": "NDC"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Abe, Yoshio"}], "nameIdentifiers": [{"nameIdentifier": "44672", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takisawa, Takaya"}], "nameIdentifiers": [{"nameIdentifier": "44673", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kawamura, Midori"}], "nameIdentifiers": [{"nameIdentifier": "44674", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Sasaki, Katsutaka"}], "nameIdentifiers": [{"nameIdentifier": "44675", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-01-12"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "No_28_JJAP_46_6778.pdf", "filesize": [{"value": "250.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 250500.0, "url": {"label": "No_28_JJAP_46_6778.pdf", "url": "https://kitami-it.repo.nii.ac.jp/record/8472/files/No_28_JJAP_46_6778.pdf"}, "version_id": "49fe1132-4268-45c8-8178-5f5ccecd374f"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "reactive sputtering", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Si model target", "subitem_subject_scheme": "Other"}, {"subitem_subject": "plasma oxidation and nitridation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "ellipsometry", "subitem_subject_scheme": "Other"}, {"subitem_subject": "target surface state", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases"}]}, "item_type_id": "3", "owner": "1", "path": ["1"], "permalink_uri": "https://kitami-it.repo.nii.ac.jp/records/8472", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2016-09-08"}, "publish_date": "2016-09-08", "publish_status": "0", "recid": "8472", "relation": {}, "relation_version_is_last": true, "title": ["Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases"], "weko_shared_id": 3}