Item type |
学術雑誌論文 / Journal Article(1) |
公開日 |
2016-09-08 |
タイトル |
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タイトル |
Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases |
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言語 |
en |
言語 |
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言語 |
eng |
キーワード |
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主題Scheme |
Other |
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主題 |
reactive sputtering |
キーワード |
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主題Scheme |
Other |
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主題 |
Si model target |
キーワード |
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主題Scheme |
Other |
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主題 |
plasma oxidation and nitridation |
キーワード |
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主題Scheme |
Other |
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主題 |
ellipsometry |
キーワード |
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主題Scheme |
Other |
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主題 |
target surface state |
資源タイプ |
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資源 |
http://purl.org/coar/resource_type/c_6501 |
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タイプ |
journal article |
アクセス権 |
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アクセス権 |
open access |
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アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
著者 |
Abe, Yoshio
Takisawa, Takaya
Kawamura, Midori
Sasaki, Katsutaka
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著者別名 |
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識別子Scheme |
WEKO |
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識別子 |
44879 |
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識別子Scheme |
KAKEN |
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識別子URI |
https://nrid.nii.ac.jp/ja/nrid/1000020261399 |
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識別子 |
20261399 |
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姓名 |
阿部, 良夫 |
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言語 |
ja |
著者別名 |
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識別子Scheme |
WEKO |
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識別子 |
44880 |
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識別子Scheme |
KAKEN |
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識別子URI |
https://nrid.nii.ac.jp/ja/nrid/1000070261401 |
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識別子 |
70261401 |
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姓名 |
川村, みどり |
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言語 |
ja |
抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Reactive sputtering is a very useful and widely used technique for preparing compound thin films, however, the target surface state is not fully understood. In this study, a Si wafer was used as a model sputtering target, and the thickness of the oxide and nitride layers formed on the target surface after sputtering in Ar+O2 and Ar+N2 mixed gases, respectively, was measured by ellipsometry. The maximum thicknesses of oxide and nitride layers were found to be approximately 7 nm in pure O2 gas and 4 nm in pure N2 gas, respectively. The oxidation rate of Si in oxygen plasma was thought to be higher than the nitridation rate of Si in nitrogen plasma. |
書誌情報 |
Japanese Journal of Applied Physics
巻 46,
号 10A,
p. 6778-6781,
発行日 2007
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権利 |
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権利情報 |
c 2007 The Japan Society of Applied Physics |
出版者 |
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出版者 |
The Japan Society of Applied Physics |
著者版フラグ |
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言語 |
en |
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値 |
author |
出版タイプ |
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出版タイプ |
AM |
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出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |