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Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases
https://kitami-it.repo.nii.ac.jp/records/8472
https://kitami-it.repo.nii.ac.jp/records/847286f76898-cfa2-4fe7-b04c-e43c5fa7b9ae
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
No_28_JJAP_46_6778.pdf (250.5 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 公開日 | 2016-09-08 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | reactive sputtering | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | Si model target | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | plasma oxidation and nitridation | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | ellipsometry | |||||||||||||
| キーワード | ||||||||||||||
| 主題Scheme | Other | |||||||||||||
| 主題 | target surface state | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| タイプ | journal article | |||||||||||||
| アクセス権 | ||||||||||||||
| アクセス権 | open access | |||||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||
| 著者 |
Abe, Yoshio
× Abe, Yoshio
× Takisawa, Takaya
× Kawamura, Midori
× Sasaki, Katsutaka
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| 著者別名 | ||||||||||||||
| 識別子Scheme | WEKO | |||||||||||||
| 識別子 | 44879 | |||||||||||||
| 識別子Scheme | KAKEN | |||||||||||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000020261399 | |||||||||||||
| 識別子 | 20261399 | |||||||||||||
| 姓名 | 阿部, 良夫 | |||||||||||||
| 言語 | ja | |||||||||||||
| 著者別名 | ||||||||||||||
| 識別子Scheme | WEKO | |||||||||||||
| 識別子 | 44880 | |||||||||||||
| 識別子Scheme | KAKEN | |||||||||||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000070261401 | |||||||||||||
| 識別子 | 70261401 | |||||||||||||
| 姓名 | 川村, みどり | |||||||||||||
| 言語 | ja | |||||||||||||
| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | Reactive sputtering is a very useful and widely used technique for preparing compound thin films, however, the target surface state is not fully understood. In this study, a Si wafer was used as a model sputtering target, and the thickness of the oxide and nitride layers formed on the target surface after sputtering in Ar+O2 and Ar+N2 mixed gases, respectively, was measured by ellipsometry. The maximum thicknesses of oxide and nitride layers were found to be approximately 7 nm in pure O2 gas and 4 nm in pure N2 gas, respectively. The oxidation rate of Si in oxygen plasma was thought to be higher than the nitridation rate of Si in nitrogen plasma. | |||||||||||||
| 書誌情報 |
Japanese Journal of Applied Physics 巻 46, 号 10A, p. 6778-6781, 発行日 2007 |
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| 権利 | ||||||||||||||
| 権利情報 | c 2007 The Japan Society of Applied Physics | |||||||||||||
| 出版者 | ||||||||||||||
| 出版者 | The Japan Society of Applied Physics | |||||||||||||
| 著者版フラグ | ||||||||||||||
| 言語 | en | |||||||||||||
| 値 | author | |||||||||||||
| 出版タイプ | ||||||||||||||
| 出版タイプ | AM | |||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||
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Abe, Yoshio, Takisawa, Takaya, Kawamura, Midori, Sasaki, Katsutaka, 2007, Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases: The Japan Society of Applied Physics, 6778–6781 p.
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