{"created":"2021-03-01T06:00:49.447310+00:00","id":8472,"links":{},"metadata":{"_buckets":{"deposit":"e2fa1a7f-d470-414e-89ef-833dfbda8f2e"},"_deposit":{"id":"8472","owners":[],"pid":{"revision_id":0,"type":"depid","value":"8472"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00008472","sets":["1:87"]},"author_link":["44879","44880","44672","44673","44674","44675"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10A","bibliographicPageEnd":"6781","bibliographicPageStart":"6778","bibliographicVolumeNumber":"46","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Reactive sputtering is a very useful and widely used technique for preparing compound thin films, however, the target surface state is not fully understood. In this study, a Si wafer was used as a model sputtering target, and the thickness of the oxide and nitride layers formed on the target surface after sputtering in Ar+O2 and Ar+N2 mixed gases, respectively, was measured by ellipsometry. The maximum thicknesses of oxide and nitride layers were found to be approximately 7 nm in pure O2 gas and 4 nm in pure N2 gas, respectively. The oxidation rate of Si in oxygen plasma was thought to be higher than the nitridation rate of Si in nitrogen plasma.","subitem_description_type":"Abstract"}]},"item_3_full_name_183":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44879","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"20261399","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000020261399 "}],"names":[{"name":"阿部, 良夫","nameLang":"ja"}]},{"nameIdentifiers":[{"nameIdentifier":"44880","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70261401","nameIdentifierScheme":"KAKEN","nameIdentifierURI":"https://nrid.nii.ac.jp/ja/nrid/1000070261401 "}],"names":[{"name":"川村, みどり","nameLang":"ja"}]}]},"item_3_publisher_212":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"The Japan Society of Applied Physics"}]},"item_3_rights_192":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"c 2007 The Japan Society of Applied Physics"}]},"item_3_select_195":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"author"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Abe, Yoshio","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44672","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takisawa, Takaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44673","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawamura, Midori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44674","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Katsutaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"44675","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-12"}],"displaytype":"detail","filename":"No_28_JJAP_46_6778.pdf","filesize":[{"value":"250.5 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"No_28_JJAP_46_6778.pdf","url":"https://kitami-it.repo.nii.ac.jp/record/8472/files/No_28_JJAP_46_6778.pdf"},"version_id":"49fe1132-4268-45c8-8178-5f5ccecd374f"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"reactive sputtering","subitem_subject_scheme":"Other"},{"subitem_subject":"Si model target","subitem_subject_scheme":"Other"},{"subitem_subject":"plasma oxidation and nitridation","subitem_subject_scheme":"Other"},{"subitem_subject":"ellipsometry","subitem_subject_scheme":"Other"},{"subitem_subject":"target surface state","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["87"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2016-09-08"},"publish_date":"2016-09-08","publish_status":"0","recid":"8472","relation_version_is_last":true,"title":["Target-Surface Compound Layers Formed by Reactive Sputtering of Si Target in Ar+O2 and Ar+N2 Mixed Gases"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2024-06-03T02:12:11.986967+00:00"}