{"_buckets": {"deposit": "b8f2a82d-fb19-4946-ac12-cc54370fd732"}, "_deposit": {"id": "7524", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "7524"}, "status": "published"}, "_oai": {"id": "oai:kitami-it.repo.nii.ac.jp:00007524", "sets": ["1"]}, "item_3_biblio_info_186": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2010-06", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "PRICM7", "bibliographicPageEnd": "1685", "bibliographicPageStart": "1682", "bibliographicVolumeNumber": "654-656", "bibliographic_titles": [{"bibliographic_title": "Materials Science Forum"}]}]}, "item_3_description_184": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "We numerically evaluate the accumulation of dislocations in periodic structure of the\nshallow trench isolation (STI) type ULSI cells which has generally been adopted as the latest\nsemiconductor device structure. STI type ULSI cells with gate length less than 62 nm and various\ntrench depths are employed and subjected to a temperature drop from the initial value of 1000 \u2103.\nDislocation accumulation is evaluated by a technique of crystal plasticity analysis. Relations between\nthe geometry of the STI type ULSI cells and dislocation accumulation are discussed.", "subitem_description_type": "Abstract"}]}, "item_3_description_185": {"attribute_name": "\u5185\u5bb9\u8a18\u8ff0", "attribute_value_mlt": [{"subitem_description": "c (2010) Trans Tech Publications", "subitem_description_type": "Other"}]}, "item_3_publisher_212": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "Trans Tech Publications"}]}, "item_3_relation_191": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "http://doi.org/10.4028/www.scientific.net/MSF.654-656.1682", "subitem_relation_type_select": "DOI"}}]}, "item_3_select_195": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "author"}]}, "item_3_subject_196": {"attribute_name": "\u65e5\u672c\u5341\u9032\u5206\u985e\u6cd5", "attribute_value_mlt": [{"subitem_subject": "549", "subitem_subject_scheme": "NDC"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Sato, Michihiro"}], "nameIdentifiers": [{"nameIdentifier": "38535", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohashi, Tetsuya"}], "nameIdentifiers": [{"nameIdentifier": "38536", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Aikawa, Keisuke"}], "nameIdentifiers": [{"nameIdentifier": "38537", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Maruizumi, Takuya"}], "nameIdentifiers": [{"nameIdentifier": "38538", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kitagawa, Isao"}], "nameIdentifiers": [{"nameIdentifier": "38539", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-11-22"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "pricm7_m_sato.pdf", "filesize": [{"value": "389.3 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 389300.0, "url": {"label": "pricm7_m_sato.pdf", "url": "https://kitami-it.repo.nii.ac.jp/record/7524/files/pricm7_m_sato.pdf"}, "version_id": "b57a4649-eb33-475d-a42b-81c6a1ef1000"}]}, "item_keyword": {"attribute_name": "\u30ad\u30fc\u30ef\u30fc\u30c9", "attribute_value_mlt": [{"subitem_subject": "ULSI", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Dislocation", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Crystal plasticity analysis", "subitem_subject_scheme": "Other"}, {"subitem_subject": "Finite element method", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length"}]}, "item_type_id": "3", "owner": "1", "path": ["1"], "permalink_uri": "https://kitami-it.repo.nii.ac.jp/records/7524", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2012-06-12"}, "publish_date": "2012-06-12", "publish_status": "0", "recid": "7524", "relation": {}, "relation_version_is_last": true, "title": ["Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length"], "weko_shared_id": 3}