@article{oai:kitami-it.repo.nii.ac.jp:00007524,
 author = {Sato, Michihiro and Ohashi, Tetsuya and Aikawa, Keisuke and Maruizumi, Takuya and Kitagawa, Isao},
 issue = {PRICM7},
 journal = {Materials Science Forum},
 month = {Jun},
 note = {We numerically evaluate the accumulation of dislocations in periodic structure of the
shallow trench isolation (STI) type ULSI cells which has generally been adopted as the latest
semiconductor device structure. STI type ULSI cells with gate length less than 62 nm and various
trench depths are employed and subjected to a temperature drop from the initial value of 1000 ℃.
Dislocation accumulation is evaluated by a technique of crystal plasticity analysis. Relations between
the geometry of the STI type ULSI cells and dislocation accumulation are discussed., c (2010) Trans Tech Publications},
 pages = {1682--1685},
 title = {Simulation of Dislocation Accumulation in ULSI Cells of Reduced Gate Length},
 volume = {654-656},
 year = {2010}
}