| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2012-06-08 |
| タイトル |
|
|
タイトル |
不純物がドープされたULSIセルに生ずる転位の結晶塑性解析 |
|
言語 |
ja |
| タイトル |
|
|
タイトル |
Crystal Plasticity Analysis of Dislocation Accumulation in Impurity Doped-ULSI Cells |
|
言語 |
en |
| 言語 |
|
|
言語 |
jpn |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
ULSI |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Dislocation |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Impurity Doping |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Crystal Plasticity Analysis |
| キーワード |
|
|
主題Scheme |
Other |
|
主題 |
Finite Element |
| 資源タイプ |
|
|
資源 |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
佐藤, 満弘
大橋, 鉄也
丸泉, 琢也
北川, 功
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Several atomic level problems such as uneven oxidation film or generation of lattice defects take place in the fabrication processes of nano-meter order devices. Among them，dislocation accumulation is a serious problem. Generation and accumulation of dislocations are known to take place during the cooling processes of device fabrication due to its thermo-plastic deformation. Dislocations accumulated in the electron channel have an enormous effect on the electronic state of the device，increase the signal delay and obstruct devices from normal operation. Therefore，it is important to understand the deformation and the dislocation accumlation for the fabrications of nano-mater order devices. On the other hand, impurity doping is an indispensable process fof the device fabrication, and also important in dislocation accumulation. In this study, we make numerical models of ULSI cells where impurities are doped at some limited areas. Dislocation accumulation in the models during cooling processes of device fabrication is analysed by employing a technique of crystal plasticity analysis and evaluate the thermal stress, plastic slip deformation and accumulation of dislocations when the temprature drops from the initial value of 1000°C. Possibilities for the control of deslocation accumulation in impurity doped-ULSI cells are discussed. |
| 内容記述 |
|
|
内容記述タイプ |
Other |
|
内容記述 |
本文データは学協会の許諾に基づきCiNiiから複製したものである |
| 書誌情報 |
日本機械学會論文集. A編
巻 75,
号 756,
p. 121-126,
発行日 2009-08
|
| 権利 |
|
|
権利情報 |
日本機械学会 |
| 出版者 |
|
|
出版者 |
日本機械学会 |
|
言語 |
ja |
| 著者版フラグ |
|
|
言語 |
en |
|
値 |
publisher |
| 出版タイプ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
Ohashi_110007359916.pdf (579.2 kB)
