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Growth of Zinc Oxide Nanorods Using Various Seed Layer Annealing Temperatures and Substrate Materials
https://kitami-it.repo.nii.ac.jp/records/8481
https://kitami-it.repo.nii.ac.jp/records/84814f9b9d46-cb40-455a-b24f-a0a948beb289
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
2014_Growth of zinc oxide.pdf (992.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2016-11-11 | |||||
| タイトル | ||||||
| タイトル | Growth of Zinc Oxide Nanorods Using Various Seed Layer Annealing Temperatures and Substrate Materials | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | ZnO | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Nanorods | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Seed layer | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Annealing temperature | |||||
| キーワード | ||||||
| 主題Scheme | Other | |||||
| 主題 | Substrate materials | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権URI | open access | |||||
| 著者 |
Kim, Kyung Ho
× Kim, Kyung Ho× Utashiro, Kazuomi× Abe, Yoshio× Kawamura, Midori |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44878 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000070608471 | |||||
| 識別子 | 70608471 | |||||
| 姓名 | 金, 敬鎬 | |||||
| 言語 | ja | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44879 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000020261399 | |||||
| 識別子 | 20261399 | |||||
| 姓名 | 阿部, 良夫 | |||||
| 言語 | ja | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44880 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000070261401 | |||||
| 識別子 | 70261401 | |||||
| 姓名 | 川村, みどり | |||||
| 言語 | ja | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We fabricated zinc oxide (ZnO) nanorods (NRs) with ZnO seed layers by using the sol-gel solution method with various annealing temperatures on different substrate materials (silicon, glass, and fluorine doped tin oxide (FTO) coated glass). Within a certain range of seed annealing temperatures, the alignment and length of the NRs were significantly improved. However, the growth rate of the NRs was less affected by the substrate material at a fixed seed annealing temperature. From X-ray diffraction (XRD) measurements, the NRs grown on the silicon substrate exhibited better crystallinity than those grown on the glass and FTO coated glass substrates. During the growth process for the NRs, the self-attraction phenomenon occurred, which led to a decrease in the NR density and improved the alignment, resulting in a highly c-axis oriented ZnO NR growth on the substrate. | |||||
| 内容記述 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Open Access authors retain the copyrights of their papers, and all open access articles are distributed under the terms of the Creative Commons Attribution 4.0 International License | |||||
| 書誌情報 |
Int. J. Electrochem. Sci. 巻 9, 号 2014, p. 2080-2089, 発行日 2014 |
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| 権利 | ||||||
| 権利情報 | c 2014 by ESG | |||||
| 出版者 | ||||||
| 出版者 | Electrochemical Science Group（ESG） | |||||
| 著者版フラグ | ||||||
| 値 | publisher | |||||
| 出版タイプ | ||||||
| 出版タイプ | VoR | |||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
