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  1. 学術雑誌論文
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Electrochromic properties of iridium oxide thin films prepared by reactive sputtering in O2 or H2O atmosphere

https://kitami-it.repo.nii.ac.jp/records/7959
https://kitami-it.repo.nii.ac.jp/records/7959
f827a0bf-4f40-40a1-8072-fa39e516e3df
名前 / ファイル ライセンス アクション
1.4923227.pdf 1.4923227.pdf (2.7 MB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2015-09-07
タイトル
タイトル Electrochromic properties of iridium oxide thin films prepared by reactive sputtering in O2 or H2O atmosphere
言語 en
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
著者 Ito, Satoshi

× Ito, Satoshi

en Ito, Satoshi

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Abe, Yoshio

× Abe, Yoshio

en Abe, Yoshio

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Kawamura, Midori

× Kawamura, Midori

en Kawamura, Midori

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Kim, Kyung Ho

× Kim, Kyung Ho

en Kim, Kyung Ho

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抄録
内容記述タイプ Abstract
内容記述 Iridium oxide is an electrochromic (EC) material, i.e., it shows reversible and persistent changes in optical properties. In this study, the authors investigated the effects of substrate temperature and sputtering gas on the structures and EC properties of iridium oxide thin films prepared by reactive radio-frequency magnetron sputtering. An Ir metal target was sputtered in an O2 or H2O atmosphere at substrate temperatures between ?30 and 130?°C. The crystal structures and chemical bonding states of the films were examined using x-ray diffraction and Fourier-transform infrared (IR) spectroscopy, respectively, and their EC properties were studied in 0.5?M aqueous H2SO4 electrolyte solution. IrO2 films were deposited at 70 and 130?°C, and amorphous films were formed at 20 and ?30?°C in both O2 and H2O atmospheres. IR absorption peaks from hydrogen-bonded OH groups were clearly observed for films deposited in an H2O atmosphere at substrate temperatures of ?30 and 20?°C, which indicates that iridium oxyhydroxide or hydrated iridium oxide films were deposited. The amorphous iridium oxyhydroxide or hydrated iridium oxide films showed large variations in transmittance and high bleached-state transmittances, and they are considered to be suitable for use in EC devices.
書誌情報 Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

巻 B 33, p. 041204, 発行日 2015
DOI
識別子タイプ DOI
関連識別子 https://doi.org/10.1116/1.4923227
権利
権利情報 Copyright 2000 American Institute of Physics. This article maybe downloaded for personal use only. Any other use requiresprior permission of the author and the American Institute ofPhysics. The following article appeared in J. Vac. Sci. Technol. B 33, 041204 (2015) and may be found at http://dx.doi.org/10.1116/1.4923227
出版者
出版者 American Vacuum Society
言語 en
著者版フラグ
言語 en
値 publisher
出版タイプ
出版タイプ VoR
出版タイプResource http://purl.org/coar/version/c_970fb48d4fbd8a85
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