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Crystal Plasticity Analysis of Dislocation Accumulation in ULSI Cells with Consideration of Temperature Dependence of the Lattice Friction Stress for Silicon
https://kitami-it.repo.nii.ac.jp/records/6891
https://kitami-it.repo.nii.ac.jp/records/6891fdd5b333-f939-40d9-bce7-da72b13900f7
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
5068.pdf (2.2 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-04-19 | |||||
| タイトル | ||||||
| タイトル | Crystal Plasticity Analysis of Dislocation Accumulation in ULSI Cells with Consideration of Temperature Dependence of the Lattice Friction Stress for Silicon | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | open access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
| 著者 |
Sato, Michihiro
× Sato, Michihiro× Ohashi, Tetsuya× Maruizumi, Takuya× Kitagawa, Isao |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44817 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000050162483 | |||||
| 識別子 | 50162483 | |||||
| 姓名 | 佐藤, 満弘 | |||||
| 言語 | ja | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 44811 | |||||
| 識別子Scheme | KAKEN | |||||
| 識別子URI | https://nrid.nii.ac.jp/ja/nrid/1000080312445 | |||||
| 識別子 | 80312445 | |||||
| 姓名 | 大橋, 鉄也 | |||||
| 言語 | ja | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Representative length scale of ULSI (Ultra Large Scale Integration) cells is going to be at a nano-meter order, and the atomic level defects, such as uneven oxide films or dislocation accumulation are becoming more and more important. Among these defects, dislocation accumulation is known to be caused by thermo-plastic deformation in silicon during the processes of device fabrication. In this study, we analyse such thermal stress, plastic slip deformation and accumulation of dislocations in STI (Shallow Trench Isolation) type ULSI devices when the temperature drops from the initial at 1000 ℃ to room temperature. For the analysis, we use a crystal plasticity analysis code CLP, assuming that lattice friction stress for the movement of dislocations is proportional to the hardness of silicon, which is known to have strong dependency on temperature. The results show that dislocations are generated between the temperature range from 880 to 800 ℃, and its maximum density is highly dependent on the lattice friction stress in the temperature range above 800 ℃. For example, the difference of 16 Mpa in the lattice friction stress at 1000 ℃ caused increase in dislocation density more than ten times. It is concluded that control of lattice friction stress at high temperatures is one of the most promising way for the suppression of dislocation accumulation. | |||||
| 書誌情報 |
Key Engineering Materials 巻 340-341, p. 199-204, 発行日 2007 |
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| 権利 | ||||||
| 権利情報 | http://www.ttp.net/1013-9826.html | |||||
| 権利 | ||||||
| 権利情報 | Trans Tech Publications, Michihiro Sato, Tetsuya Ohashi, Takuya Maruizumi and Isao Kitagawa, Key Engineering Materials, 340-341, 2007, 199-204. | |||||
| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| 著者版フラグ | ||||||
| 値 | author | |||||
| 出版タイプ | ||||||
| 出版タイプ | AM | |||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
