| Item type |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2007-04-19 |
| タイトル |
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|
タイトル |
Crystal Plasticity Analysis of Thermal Deformation and Dislocation Accumulation in ULSI Cells |
|
言語 |
en |
| 言語 |
|
|
言語 |
eng |
| 資源タイプ |
|
|
資源 |
http://purl.org/coar/resource_type/c_6501 |
|
タイプ |
journal article |
| アクセス権 |
|
|
アクセス権 |
open access |
|
アクセス権URI |
http://purl.org/coar/access_right/c_abf2 |
| 著者 |
Sato, Michihiro
Ohashi, Tetsuya
Maruizumi, Takuya
Kitagawa, Isao
|
| 抄録 |
|
|
内容記述タイプ |
Abstract |
|
内容記述 |
Thermal stress, plastic slip deformation and accumulation of dislocations in shallow trench isolation (STI) type ULSI devices when the temperature drops from 1000 ℃ to room temperature are analyzed by a crystal plasticity analysis cord. The results show that dislocation accumulation takes place at the temperature range over 800 ℃, and the difference of 6 MPa in the lattice friction stress at 1000 ℃ causes increase of dislocation density more than 1.6 times. Dislocations generate and accumulate at the shoulder part of the device area and bottom corners of the trench. Dislocations are categorized into two groups. In one group, dislocation lines are mostly straight and parallel to the trench direction, and in the other group, dislocations make half loop type structure. Possibilities for the suppression of dislocation accumulation through control of lattice friction stress at high temperature region are discussed. |
| 書誌情報 |
Key Engineering Materials
巻 324-325,
p. 1035-1038,
発行日 2006
|
| 権利 |
|
|
権利情報 |
http://www.ttp.net/1013-9826.html |
| 権利 |
|
|
権利情報 |
Trans Tech Publications, Michihiro Sato, Tetsuya Ohashi, Takuya Maruizumi and Isao Kitagawa, Key Engineering Materials, 324-325, 2006, 1035-1038. |
| フォーマット |
|
|
内容記述タイプ |
Other |
|
内容記述 |
application/pdf |
| 出版者 |
|
|
出版者 |
Trans Tech Publications |
|
言語 |
en |
| 著者版フラグ |
|
|
言語 |
en |
|
値 |
author |
| 出版タイプ |
|
|
出版タイプ |
AM |
|
出版タイプResource |
http://purl.org/coar/version/c_ab4af688f83e57aa |
5064.pdf (1.5 MB)
