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  1. 学術雑誌論文
  2. 洋雑誌

Simulation of Dislocation Accumulation in ULSI Cells with STI structure

https://kitami-it.repo.nii.ac.jp/records/6877
https://kitami-it.repo.nii.ac.jp/records/6877
54622bba-6c84-4bba-9177-4a8542c72975
名前 / ファイル ライセンス アクション
4103.pdf 4103.pdf (113.0 kB)
Item type 学術雑誌論文 / Journal Article(1)
公開日 2007-04-19
タイトル
タイトル Simulation of Dislocation Accumulation in ULSI Cells with STI structure
言語 en
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ journal article
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
著者 Ohashi, Tetsuya

× Ohashi, Tetsuya

en Ohashi, Tetsuya

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Sato, Michihiro

× Sato, Michihiro

en Sato, Michihiro

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Maruizumi, Takuya

× Maruizumi, Takuya

en Maruizumi, Takuya

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Kitagawa, Isao

× Kitagawa, Isao

en Kitagawa, Isao

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著者別名
抄録
内容記述タイプ Abstract
内容記述 The periodic structure of the shallow trench isolation (STI) type ULSI cells is generally used for the latest semiconductor device structure. However, dislocations sometimes accumulate in the electron channel when the device size becomes small, and they have an enormous effect on the electronic state and obstruct the device from normal operation. In this paper, we numerically model the periodic structure of the STI type ULSI cells, and analyze the plastic slip that takes place during the oxidation process of oxide film area. The slip deformation is analyzed by a crystal plasticity analysis cord, which has been developed on the basis of finite element technique, and we evaluate the accumulation of dislocations that accompany plastic slip. The results show stress concentrations at the shoulder part of the device area and the bottom corners of the trench for the device isolation, and high stresses at these area cause plastic slip and dislocation accumulation. The direction of these dislocation lines are shown to be mostly parallel to the trench direction and dislocations are approximately 60° mixed type.
書誌情報 Applied Surface Science

巻 216, 号 1-4, p. 340-346, 発行日 2003-06
DOI
識別子タイプ DOI
関連識別子 http://doi.org/10.1016/S0169-4332(03)00421-5
権利
権利情報 http://www.sciencedirect.com/science/journal/01694332
権利
権利情報 Elsevier Science B.V., Tetsuya Ohashi, Michihiro Sato, Takuya Maruizumi and Isao Kitagawa, Applied Surface Science, 216(1-4), 2003, 340-346.
フォーマット
内容記述タイプ Other
内容記述 application/pdf
出版者
出版者 Elsevier
言語 en
著者版フラグ
言語 en
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出版タイプ
出版タイプ AM
出版タイプResource http://purl.org/coar/version/c_ab4af688f83e57aa
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