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Nb-Taの陽極酸化膜の誘電特性
https://kitami-it.repo.nii.ac.jp/records/6473
https://kitami-it.repo.nii.ac.jp/records/6473ad20d0af-9530-452d-8a5e-b19bdbf20e7f
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
10-2-6.pdf (3.7 MB)
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| Item type | 紀要論文 / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2007-04-09 | |||||
| タイトル | ||||||
| タイトル | Nb-Taの陽極酸化膜の誘電特性 | |||||
| 言語 | ja | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源 | http://purl.org/coar/resource_type/c_6501 | |||||
| タイプ | departmental bulletin paper | |||||
| その他のタイトル | ||||||
| その他のタイトル | Dielectric Properties of Oxides Prepared by Anodizing Nb-Ta Mixed Films | |||||
| 言語 | en | |||||
| 著者 |
佐々木, 克孝
× 佐々木, 克孝× 梅沢, 利二 |
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| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 32726 | |||||
| 姓名 | Shigeyoshi, OIWAKE | |||||
| 言語 | en | |||||
| 著者別名 | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 32727 | |||||
| 姓名 | Toshiji, UMEZAWA | |||||
| 言語 | en | |||||
| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Nb-Ta mixed thin films prepared by DC sputtering were anodized for the purpose of extending the properties of tantalum thin film capacitor. Dielectric properties (capacitance, tan∂and temperature coefficient of capacitance) were investigated as a function of tantalum contents in mixed films. For the determination of thickness of anodic oxide films, sputter ecthing of the anodized films has been carried out varying ecthing times. The thickness obtained by the sputter ecthing method was compared with the values calculated according to Gerstenberg’s equation. It is reasonable to say that the agreements between both values are fairly good, taking into account the measurement errors of interferometric method. Dielectric constants of mixed anodic oxide films calculated by Wagner’s theory were compared with the values obtained from measured values of oxide thickness and capacitance. The agreements are also good. Therefore, we can conclude that mixed anodic oxide films in this work are very uniform and have ideally mixed structure. Furthermore, it is seen that the value of dielectric constant can be changed from 33 to 26 by changing tantalum contents in mixed films, above the region of 50 atm. ％, maintaining constant value of tan ∂below 0.01. | |||||
| 言語 | en | |||||
| 書誌情報 |
ja : 北見工業大学研究報告 巻 10, 号 2, p. 203-211, 発行日 1979-03 |
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| フォーマット | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | application/pdf | |||||
| 著者版フラグ | ||||||
| 言語 | en | |||||
| 値 | publisher | |||||
| 出版者 | ||||||
| 出版者 | 北見工業大学 | |||||
| 言語 | ja | |||||
