ログイン
言語:

WEKO3

  • トップ
  • コミュニティ
  • ランキング
AND
To
lat lon distance
To

Field does not validate



インデックスリンク

インデックスツリー

メールアドレスを入力してください。

WEKO

One fine body…

WEKO

One fine body…

アイテム

{"_buckets": {"deposit": "932dce1c-aa6c-4f5e-afae-782fc4e6cadb"}, "_deposit": {"id": "6421", "owners": [], "pid": {"revision_id": 0, "type": "depid", "value": "6421"}, "status": "published"}, "_oai": {"id": "oai:kitami-it.repo.nii.ac.jp:00006421"}, "item_2_alternative_title_18": {"attribute_name": "\u305d\u306e\u4ed6\u306e\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_alternative_title": "On the Anodization Trimming of Ti\uff0dSi0_2 Cermet Thin Film Resistors"}]}, "item_2_biblio_info_6": {"attribute_name": "\u66f8\u8a8c\u60c5\u5831", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "1977-03", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "2", "bibliographicPageEnd": "179", "bibliographicPageStart": "171", "bibliographicVolumeNumber": "8", "bibliographic_titles": [{"bibliographic_title": "\u5317\u898b\u5de5\u696d\u5927\u5b66\u7814\u7a76\u5831\u544a"}]}]}, "item_2_description_14": {"attribute_name": "\u30d5\u30a9\u30fc\u30de\u30c3\u30c8", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_2_description_4": {"attribute_name": "\u6284\u9332", "attribute_value_mlt": [{"subitem_description": "The trimming of the resistance of thin film resistors has been carried out by cutting their size with mechanical cutter or laser beam.\u3000However, the cutting method generally introduces micro-cracking into the thin films.\u3000The cermet thin films consisting of Si0_2 and metal are deposited more thickl compared with metal thin film resistors, but are rather weak against mechanical and thermal shock. Therefore, we have investigated the trimming by changing the film thckiness by anodic oxidation for cermet thin film resistors. The Ti-Si0_2 cermet thin films were anodized for 30 minutes at several different anodizing voltages using filter papers, which were wetted with Dimethyl Sulfoxide-Phosphoric Acid \uff0820\uff05\uff09solution, and sandwiched between the film and top cathode electrode.\u3000The films showed a wide resistance change by anodization, but the anodized film resistors were not so stable as expected.  By an anodization with the voltage lower than 15 volts, the trimming of less than 5\uff05 is possible and reproducible.\u3000The heat-treatment in air after anodization developed markedly the stability of resistance. The cermet thin films, heat-treated at 300\u2103 for 3 hrs. in air after anodization at 50 volts, showed fairly good stability and a resistance change of less than 1\uff05 by a 1000-hour stability test at 125\u2103 in air.  The films sputtered from a composite target with a 16\uff05 SiO_2 area ratio provided the most stable cermet thin film resistors.\u3000It was found that the anodization?heat-treatment combination is the most valuable trimming method in order to realize the exact and stable Ti-SiO_2 cermet thin film resistors.", "subitem_description_type": "Abstract"}]}, "item_2_full_name_3": {"attribute_name": "\u8457\u8005\u5225\u540d", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "32525", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "UMEZAWA, Toshiji"}]}, {"nameIdentifiers": [{"nameIdentifier": "32526", "nameIdentifierScheme": "WEKO"}], "names": [{"name": "TAZAWA, Tatsuo"}]}]}, "item_2_publisher_32": {"attribute_name": "\u51fa\u7248\u8005", "attribute_value_mlt": [{"subitem_publisher": "\u5317\u898b\u5de5\u696d\u5927\u5b66"}]}, "item_2_select_15": {"attribute_name": "\u8457\u8005\u7248\u30d5\u30e9\u30b0", "attribute_value_mlt": [{"subitem_select_item": "publisher"}]}, "item_creator": {"attribute_name": "\u8457\u8005", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "\u6885\u6ca2, \u5229\u4e8c"}], "nameIdentifiers": [{"nameIdentifier": "32523", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "\u7530\u6ca2, \u9054\u592b"}], "nameIdentifiers": [{"nameIdentifier": "32524", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "\u30d5\u30a1\u30a4\u30eb\u60c5\u5831", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2016-11-22"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "8-2-4.pdf", "filesize": [{"value": "3.5 MB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 3500000.0, "url": {"label": "8-2-4.pdf", "url": "https://kitami-it.repo.nii.ac.jp/record/6421/files/8-2-4.pdf"}, "version_id": "fcc6cf8d-3a61-4781-861d-e0bfc8cc749b"}]}, "item_language": {"attribute_name": "\u8a00\u8a9e", "attribute_value_mlt": [{"subitem_language": "jpn"}]}, "item_resource_type": {"attribute_name": "\u8cc7\u6e90\u30bf\u30a4\u30d7", "attribute_value_mlt": [{"resourcetype": "departmental bulletin paper", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Ti-SiO_2\u7cfb\u30b5\u30fc\u30e1\u30c3\u30c8\u8584\u819c\u62b5\u6297\u306e\u967d\u6975\u9178\u5316\u30c8\u30ea\u30df\u30f3\u30b0\u306b\u3064\u3044\u3066", "item_titles": {"attribute_name": "\u30bf\u30a4\u30c8\u30eb", "attribute_value_mlt": [{"subitem_title": "Ti-SiO_2\u7cfb\u30b5\u30fc\u30e1\u30c3\u30c8\u8584\u819c\u62b5\u6297\u306e\u967d\u6975\u9178\u5316\u30c8\u30ea\u30df\u30f3\u30b0\u306b\u3064\u3044\u3066"}]}, "item_type_id": "2", "owner": "1", "path": ["7/15/29"], "permalink_uri": "https://kitami-it.repo.nii.ac.jp/records/6421", "pubdate": {"attribute_name": "\u516c\u958b\u65e5", "attribute_value": "2007-04-09"}, "publish_date": "2007-04-09", "publish_status": "0", "recid": "6421", "relation": {}, "relation_version_is_last": true, "title": ["Ti-SiO_2\u7cfb\u30b5\u30fc\u30e1\u30c3\u30c8\u8584\u819c\u62b5\u6297\u306e\u967d\u6975\u9178\u5316\u30c8\u30ea\u30df\u30f3\u30b0\u306b\u3064\u3044\u3066"], "weko_shared_id": 3}
  1. 紀要掲載論文
  2. 北見工業大学研究報告
  3. Vol.8

Ti-SiO_2系サーメット薄膜抵抗の陽極酸化トリミングについて

https://kitami-it.repo.nii.ac.jp/records/6421
684b2b53-a716-420f-8e82-caca48911705
名前 / ファイル ライセンス アクション
8-2-4.pdf 8-2-4.pdf (3.5 MB)
Item type 紀要論文 / Departmental Bulletin Paper(1)
公開日 2007-04-09
タイトル
タイトル Ti-SiO_2系サーメット薄膜抵抗の陽極酸化トリミングについて
言語
言語 jpn
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ departmental bulletin paper
その他のタイトル
その他のタイトル On the Anodization Trimming of Ti-Si0_2 Cermet Thin Film Resistors
著者 梅沢, 利二

× 梅沢, 利二

WEKO 32523

梅沢, 利二

Search repository
田沢, 達夫

× 田沢, 達夫

WEKO 32524

田沢, 達夫

Search repository
著者別名
識別子
識別子 32525
識別子Scheme WEKO
姓名
姓名 UMEZAWA, Toshiji
著者別名
識別子
識別子 32526
識別子Scheme WEKO
姓名
姓名 TAZAWA, Tatsuo
抄録
内容記述タイプ Abstract
内容記述 The trimming of the resistance of thin film resistors has been carried out by cutting their size with mechanical cutter or laser beam. However, the cutting method generally introduces micro-cracking into the thin films. The cermet thin films consisting of Si0_2 and metal are deposited more thickl compared with metal thin film resistors, but are rather weak against mechanical and thermal shock. Therefore, we have investigated the trimming by changing the film thckiness by anodic oxidation for cermet thin film resistors. The Ti-Si0_2 cermet thin films were anodized for 30 minutes at several different anodizing voltages using filter papers, which were wetted with Dimethyl Sulfoxide-Phosphoric Acid (20%)solution, and sandwiched between the film and top cathode electrode. The films showed a wide resistance change by anodization, but the anodized film resistors were not so stable as expected. By an anodization with the voltage lower than 15 volts, the trimming of less than 5% is possible and reproducible. The heat-treatment in air after anodization developed markedly the stability of resistance. The cermet thin films, heat-treated at 300℃ for 3 hrs. in air after anodization at 50 volts, showed fairly good stability and a resistance change of less than 1% by a 1000-hour stability test at 125℃ in air. The films sputtered from a composite target with a 16% SiO_2 area ratio provided the most stable cermet thin film resistors. It was found that the anodization?heat-treatment combination is the most valuable trimming method in order to realize the exact and stable Ti-SiO_2 cermet thin film resistors.
書誌情報 北見工業大学研究報告

巻 8, 号 2, p. 171-179, 発行日 1977-03
フォーマット
内容記述タイプ Other
内容記述 application/pdf
著者版フラグ
値 publisher
出版者
出版者 北見工業大学
戻る
0
views
See details
Views

Versions

Ver.1 2021-03-01 06:52:29.036042
Show All versions

Share

Mendeley CiteULike Twitter Facebook Print Addthis

Cite as

Export

OAI-PMH
  • OAI-PMH JPCOAR
  • OAI-PMH DublinCore
  • OAI-PMH DDI
Other Formats
  • JSON
  • BIBTEX

Confirm


Powered by CERN Data Centre & Invenio


Powered by CERN Data Centre & Invenio