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  1. 紀要掲載論文
  2. 北見工業大学研究報告
  3. Vol.7

R.F.リアクティブ・スパッタ法によるTa-Ti-O系混合誘電体薄膜

https://kitami-it.repo.nii.ac.jp/records/6393
de420ae6-717c-4723-b47e-b23a7371cb00
名前 / ファイル ライセンス アクション
7-2-4.pdf 7-2-4.pdf (6.2 MB)
Item type 紀要論文 / Departmental Bulletin Paper(1)
公開日 2007-04-09
タイトル
タイトル R.F.リアクティブ・スパッタ法によるTa-Ti-O系混合誘電体薄膜
言語
言語 jpn
資源タイプ
資源 http://purl.org/coar/resource_type/c_6501
タイプ departmental bulletin paper
その他のタイトル
その他のタイトル Mixed Dielectric Thin Films of a Ta-Ti-O System Prepared by R. F Reactive Sputtering
著者 梅沢, 利二

× 梅沢, 利二

WEKO 32421

梅沢, 利二

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矢島, 昭三

× 矢島, 昭三

WEKO 32422

矢島, 昭三

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著者別名
識別子
識別子 32423
識別子Scheme WEKO
姓名
姓名 UMEZAWA, Toshiji
著者別名
識別子
識別子 32424
識別子Scheme WEKO
姓名
姓名 YAJIMA, Shozo
抄録
内容記述タイプ Abstract
内容記述 Mixed dielectric thin films of a Ta-Ti-O system were prepared by R. F. reactive sputtering from the composite targets, which were given several different area ratios, in the sputtering gas of argon-oxygen(15%)mixture.   The value of the dielectric constant was varied almost linearly from 30 to 70 with increased Ti area ratios、but that of dielectric loss remained less than 0.04. The addition of a Ta-O system into the Ti?O system markedly improved frequency characteristics of the dielectric constant and loss, and also decreased the magnitude of the leakage current.   The structural properties were investigated by electron diffraction and the results showed that the Ta-Ti-O system included only an amorphous Ti-O system and a polycrystalline Ta-O system.   The investigation of the conduction through this dielectric thin films showed that the mechanism was due to the Pool-Frenkel effect.
書誌情報 北見工業大学研究報告

巻 7, 号 2, p. 289-303, 発行日 1976-06
フォーマット
内容記述タイプ Other
内容記述 application/pdf
著者版フラグ
値 publisher
出版者
出版者 北見工業大学
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