{"created":"2021-03-01T05:59:52.326410+00:00","id":7417,"links":{},"metadata":{"_buckets":{"deposit":"ac209e31-0cd6-4dab-a565-d9c9c517273e"},"_deposit":{"id":"7417","owners":[],"pid":{"revision_id":0,"type":"depid","value":"7417"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00007417","sets":["1:86"]},"author_link":["37994","37995","37996","37997","37998","37989","37990","37991","37992","37993"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_3_alternative_title_198":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"Study on the Reason of Heat-Proof Property and the Reduction of Oxide Thickness of Ta2N Anodized Capacitor"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueNumber":"C2","bibliographicPageEnd":"365","bibliographicPageStart":"358","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会論文誌 C"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Ta2N陽極酸化膜キャパシタは，Ta陽極酸化膜キャパシタに比べ耐熱性を著しく改善できる。オージェ電子分光分析等によってその原因を検討したところ，下地金属であるTa2N化合物膜自体の耐熱酸化性が大きく，Ta膜の場合より下地層への酸素拡散が生じにくいためであることがわかった。また，450℃以上の高温で生じるTa2Nキャパシタの熱劣化には，Ta膜の場合と同様に酸化膜中の酸素原子が下地金属方向へ拡散し下地金属界面層の厚さが増大することと共に，A1上部電極の熱酸化と電極／酸化物界面の崩壊も関与していることがわかった。次に，Ta2Nの耐熱酸化性に着目して更なる薄膜化を検討した結果，化成電圧を30Vまで低減させても160V化成したTaの場合よりも高耐熱で，且つ容量値も3倍以上の値を実現できることがわかった。","subitem_description_type":"Abstract"}]},"item_3_description_185":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Copyright (c) by IEICE \n許諾番号：09RC0074\nIEICE Transactions Online 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