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Formation process of Al2O3 thin film by reactive sputtering
https://kitami-it.repo.nii.ac.jp/records/7352
https://kitami-it.repo.nii.ac.jp/records/7352bef1fd35-f340-4351-9a84-1d24705eaf66
名前 / ファイル | ライセンス | アクション |
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2009-04-02 | |||||
タイトル | ||||||
タイトル | Formation process of Al2O3 thin film by reactive sputtering | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源 | http://purl.org/coar/resource_type/c_5794 | |||||
タイプ | conference paper | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
Chiba, Y
× Chiba, Y× Abe, Y× Sasaki, K× Kawamura, M |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Reactive sputtering is one of the widely used techniques to prepare compound thin films. In this study, Al and Al2O3 films were deposited by RF magnetron sputtering using mixed gas of Ar and O2. The formation process of the Al2O3films was studied by plasma emission spectroscopy and target voltage measurements. Al2O3films with transmittance above 95% and refractive index of 1.50-1.66 were found to be formed at O2 flow ratios above 8%. Plasma emission peaks of O atoms (777nm) were clearly seen at oxygen flow ratios above 8%, and target voltage decreased drastically at O2 flow ratios above 8%. It is thought that the surface of Al target was changed from metallic mode into oxide mode at the O2 flow ratios of 8%. The relationship between the amount of sputtered Al atoms and the amount of supplied O2molecules was studied, and the atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2flow ratio of 8%. | |||||
言語 | en | |||||
書誌情報 |
en : ISSP2007(The 9th International Symposium on Sputtering and Plasma Processes) 巻 SP P-5, p. 90-92, 発行日 2007-12 |
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フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
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言語 | en | |||||
値 | author |