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Formation process of Al2O3 thin film by reactive sputtering

https://kitami-it.repo.nii.ac.jp/records/7352
https://kitami-it.repo.nii.ac.jp/records/7352
bef1fd35-f340-4351-9a84-1d24705eaf66
名前 / ファイル ライセンス アクション
187_ISSP_Chiba.pdf 187_ISSP_Chiba.pdf (98.1 kB)
Item type 会議発表論文 / Conference Paper(1)
公開日 2009-04-02
タイトル
タイトル Formation process of Al2O3 thin film by reactive sputtering
言語 en
言語
言語 eng
資源タイプ
資源 http://purl.org/coar/resource_type/c_5794
タイプ conference paper
アクセス権
アクセス権 open access
アクセス権URI http://purl.org/coar/access_right/c_abf2
著者 Chiba, Y

× Chiba, Y

WEKO 37513

en Chiba, Y

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Abe, Y

× Abe, Y

WEKO 37514

en Abe, Y

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Sasaki, K

× Sasaki, K

WEKO 37515

en Sasaki, K

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Kawamura, M

× Kawamura, M

WEKO 37516

en Kawamura, M

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抄録
内容記述タイプ Abstract
内容記述 Reactive sputtering is one of the widely used techniques to prepare compound thin films. In this study, Al and Al2O3 films were deposited by RF magnetron sputtering using mixed gas of Ar and O2. The formation process of the Al2O3films was studied by plasma emission spectroscopy and target voltage measurements. Al2O3films with transmittance above 95% and refractive index of 1.50-1.66 were found to be formed at O2 flow ratios above 8%. Plasma emission peaks of O atoms (777nm) were clearly seen at oxygen flow ratios above 8%, and target voltage decreased drastically at O2 flow ratios above 8%. It is thought that the surface of Al target was changed from metallic mode into oxide mode at the O2 flow ratios of 8%. The relationship between the amount of sputtered Al atoms and the amount of supplied O2molecules was studied, and the atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2flow ratio of 8%.
言語 en
書誌情報 en : ISSP2007(The 9th International Symposium on Sputtering and Plasma Processes)

巻 SP P-5, p. 90-92, 発行日 2007-12
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