{"created":"2021-03-01T05:59:25.009692+00:00","id":6970,"links":{},"metadata":{"_buckets":{"deposit":"73e35ec9-64e1-4707-b8d3-90a86f8b4df0"},"_deposit":{"id":"6970","owners":[],"pid":{"revision_id":0,"type":"depid","value":"6970"},"status":"published"},"_oai":{"id":"oai:kitami-it.repo.nii.ac.jp:00006970","sets":["1:87"]},"author_link":["35204","35205","35206","35207","35208"],"item_1646810750418":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_3_biblio_info_186":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-11","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"211901-3","bibliographicPageStart":"211901-1","bibliographicVolumeNumber":"87","bibliographic_titles":[{"bibliographic_title":"Applied physics letters"}]}]},"item_3_description_184":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Nanoindentation tests were performed on a ductile-machined silicon wafer with a Berkovich　diamond indenter, and the resulting indents were examined with a transmission electron microscope. It was found that the machining-induced subsurface amorphous layer undergoes significant plastic flow， and the microstructure of the indent depends on the indentation load. At a small load (～20 mN)，most of the indented region remains to be amorphous with minor crystalline nuclei; while under a large load (～50 mN)，the amorphous phase undergoes intensive recrystallization. The understanding and utilization of this phenomenon might be useful for improving the microscopic surface properties of silicon parts produced by a ductile machining process.","subitem_description_type":"Abstract"}]},"item_3_publisher_212":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_3_relation_191":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://doi.org/10.1063/1.2133908","subitem_relation_type_select":"DOI"}}]},"item_3_rights_192":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"The following article appeared in C.C. Hsu, J.H. Lin, T.H. Huang, K. Harada, Applied Physics Letters, 87, 211901-1-211901-3, (2005) and may be found at http://link.aip.org/link/?apl/87/211901-1."},{"subitem_rights":"Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics."}]},"item_3_select_195":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_select_item":"publisher"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yan, Jiwang","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"35204","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Hirokazu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"35205","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tamaki, Jun-ichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"35206","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gai, Xiaohui","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"35207","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuriyagawa, Tsunemoto","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"35208","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-11-22"}],"displaytype":"detail","filename":"4102.pdf","filesize":[{"value":"4.1 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"4102.pdf","url":"https://kitami-it.repo.nii.ac.jp/record/6970/files/4102.pdf"},"version_id":"a888fb88-29f3-4e9b-b151-78b8767fa83d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers","subitem_title_language":"en"}]},"item_type_id":"3","owner":"1","path":["87"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2007-05-08"},"publish_date":"2007-05-08","publish_status":"0","recid":"6970","relation_version_is_last":true,"title":["Transmission electron microscopic observation of nanoindentations made on ductile-machined silicon wafers"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2024-06-03T02:15:31.412753+00:00"}