@article{oai:kitami-it.repo.nii.ac.jp:00006898,
 author = {Abe, Yoshio and Hasegawa, Tomoaki and Kawamura, Midori and Sasaki, Katsutaka},
 issue = {1},
 journal = {Vacuum},
 month = {Oct},
 note = {Ag oxide thin films were grown on glass substrates by sputtering an Ag target in an Ar+O_2 mixed gas. Effects of O_2 flow ratio on resistivity, reflectance and transmittance of the Ag oxide films were studied. Crystal structure and chemical binding state of the films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. Ag films with a resistivity of 4 μΩcm and a reflectance of 98% were obtained at O_2 flow ratios below 5%. The increase of resistivity and the decrease of reflectance were observed with increasing O_2 flow ratio due to the formation of mixed films of Ag and Ag oxide. Above an O_2 flow ratio of 40%, the transmittance of the films increased and semitransparent Ag_2O films with resistivity of an order of 10^8Ωcm were formed., application/pdf},
 pages = {1--6},
 title = {Characterization of Ag oxide thin films prepared by reactive RF sputtering},
 volume = {76},
 year = {2004}
}