@article{oai:kitami-it.repo.nii.ac.jp:00006685,
 author = {武山, 真弓 and 鈴木, 雅英 and 野矢, 厚 and 佐々木, 克孝},
 issue = {1},
 journal = {北見工業大学研究報告},
 month = {Sep},
 note = {application/pdf, The process of silicide formation by alloy films contacted with Si has been examined on the basis of results obtained from possible combinations of binary alloy films， such as two near-noble metals, near-noble metal and refractory metal，and two refractory metals. It is found that the phase separation of the alloy films due to the silicide formation is observed in the initial stage of the reaction when the following conditions are satisfied ； (i)the alloy film consists of the combination of near-noble metal and refractory metal，which have different reaction process with Si，in the sense that the diffusion species for the reaction of the slicide formation is metal or silicon，and(ii)the alloy doesn't form a stable intermetallic compound},
 pages = {7--15},
 title = {オージエ電子分光分析による合金膜のシリサイド形成初期過程の検討},
 volume = {24},
 year = {1992}
}