@article{oai:kitami-it.repo.nii.ac.jp:00006588,
 author = {梅沢, 利二 and 松山, 浩治 and 坂口, 直志 and 高杉, 泰行},
 issue = {2},
 journal = {北見工業大学研究報告},
 month = {Mar},
 note = {application/pdf, The semiconductor-liquid junction solar cells using polycrystaline titanium oxide (n-type semiconductor) were previously reported by the authors. In this paper, the electrical properties of cells using n-Si are described with several different surface treatments. The initial etching in HF＋HNO_3 solution for 20 sec and in HF solution for 60 sec after baking at 1000℃ for 2 hr in air to dope boron from the surface of n-Si was the most preferable surface treatment for converting solar energy to electric energy. It was found that the boron thermally doped n-Si was very effective for surface stabilization, and that boron-doped and paradium-coated n-Si photoelectric-chemical cells had a high solar to electric power conversion efficiency of 4％. The evaporated Pd film was heat-treated at 400℃ for 1 hr under 2×10^<-5> Torr, and this treatment served to prolong the life time of the electrodes.},
 pages = {179--189},
 title = {半導体一液体接合型太陽電池の基礎的研究 （第２報） -n-Si‐電解質溶液?Pt系の場合-},
 volume = {17},
 year = {1986}
}