@article{oai:kitami-it.repo.nii.ac.jp:00006392,
 author = {梅沢, 利二 and 井垣, 誠吾},
 issue = {2},
 journal = {北見工業大学研究報告},
 month = {Jun},
 note = {application/pdf, Ti-SiO_2 cermet thin films were deposited onto a glass substrate by R. F. sputtering from a Ti-SiO_2 composite target， on which the SiO_2 area ratio was varied to obtain different compositions.　　　The cermet thin　films sputtered from the target composed of 16％ SiO_2-84％ Tiarea ratios showed a resistivity of 220±10μΩ-cm and a temperature coefficient of nearly zero　　　The thin films sputtered from the target given a greater SiO_2 area ratio than 16％ showed negative temperature coefficient of resistance (TCR), and those from the target given a smaller SiO_2 area ratio showed positive TCR values.　　　The study on the electrical conduction in these cermet thin　films suggested that the mechanism by a capillary model was dominant for the films with positive TCRs and the mechanism by a thermally agitated hopping process was predominant for the films with negative TCRs.},
 pages = {275--288},
 title = {高周波四極スパッタリングによるTi-SiO_2系 : サーメット薄膜の電気的特性},
 volume = {7},
 year = {1976}
}