2024-03-29T07:44:28Z
https://kitami-it.repo.nii.ac.jp/oai
oai:kitami-it.repo.nii.ac.jp:00008484
2022-12-13T02:22:47Z
1:87
Effects of Cu doping on nickel oxide thin film prepared by sol?gel solution process
Kim, Kyung Ho
Takahashi, Chiaki
Abe, Yoshio
Kawamura, Midori
NiO
Cu dopant
Sol?gel
Crystallinity
Optical band gap
We prepared nickel oxide (NiO) thin films with p-type Cu dopants (5 at%) using a sol–gel solution process and investigated their structural, optical, and electrical characteristics by X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmittance and current–voltage (I–V) characteristics. The crystallinity of the NiO films improved with the addition of Cu dopants, and the grain size increased from 38 nm (non-doped) to 50 nm (Cu-doped). The transmission of the Cu-doped NiO film decreased slightly in the visible wavelength region, and the absorption edge of the film red-shifted with the addition of the Cu dopant. Therefore, the width of the optical band gap of the Cu-doped NiO film decreased as compared to that of the non-doped NiO film. The resistivity of the Cu-doped NiO film was 23 Ω m, which was significantly less than that of the non-doped NiO film (320 Ω m). Thus, the case of Cu dopants on NiO films could be a plausible method for controlling the properties of the films.
journal article
Elsevier
2014-06
application/pdf
Optik - International Journal for Light and Electron Optics
12
125
2899
2901
https://kitami-it.repo.nii.ac.jp/record/8484/files/#4.pdf
eng
https://doi.org/10.1016/j.ijleo.2013.11.074
c 2014 Elsevier