2024-03-28T19:26:20Z
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oai:kitami-it.repo.nii.ac.jp:00008468
2022-12-13T02:22:49Z
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Ion conducting properties of hydrogen-containing Ta2O5 thin films prepared by reactive sputtering
Abe, Yoshio
Itadani, Naruhiro
Kawamura, Midori
Sasaki, Katsutaka
Itoh, Hidenobu
Proton-conducting solid electrolyte thin film
Tantalum oxide
Reactive sputtering
Ionic conductivity
Hydrogen-containing Ta2O5 (Ta2O5:H) thin films are considered to be a candidate for a proton-conducting solid-oxide electrolyte. In this study, Ta2O5:H thin films were prepared by reactively sputtering a Ta metal target in an O2 + H2O mixed gas. The effects of sputtering power and post-deposition heat treatment on the ion conducting properties of the Ta2O5:H thin films were studied. The ionic conductivity of the films was improved by decreasing the RF power and a maximum conductivity of 2 × 10?9 S/cm was obtained at an RF power of 20 W. The ionic conductivity decreased by heat-treatment in air, and no ion-conduction was observed after treatment at 300 °C due to the decrease in hydrogen content in the films.
journal article
Elsevier
2008
application/pdf
Vacuum
3
83
528
530
https://kitami-it.repo.nii.ac.jp/record/8468/files/No_5_Vaccum_83_528.pdf
eng
https://doi.org/10.1016/j.vacuum.2008.04.018
c 2008 Elsevier
open access