2024-03-28T18:49:21Z
https://kitami-it.repo.nii.ac.jp/oai
oai:kitami-it.repo.nii.ac.jp:00008467
2022-12-13T02:22:49Z
1:86
Formation process of Al2O3 thin films by reactive sputtering
Chiba, Y
Abe, Y
Kawamura, M
Sasaki, K
Reactive sputtering
Plasma emission intensity
Target voltage
Aluminum oxide
Gettering effect
Al and Al2O3 films were deposited by RF magnetron sputtering using a mixed gas of Ar and O2. The surface of the Al target was changed from the metallic mode to the oxide mode at a critical O2 flow ratio of 8%. The atomic ratio of sputtered Al atoms to supplied oxygen atoms was found to be approximately 2:3 at the critical O2 flow ratio. The oxide layer thickness formed on the Al target was estimated to be 5?7 nm at an O2 flow ratio of 100% by ellipsometry.
journal article
Elsevier
2008-10
application/pdf
Vacuum
3
83
483
485
https://kitami-it.repo.nii.ac.jp/record/8467/files/No_4_Vacuum_83_483.pdf
eng
https://doi.org/10.1016/j.vacuum.2008.04.012
c 2008 Elsevier
open access