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Influence of oxygen flow ratio on the oxidation of Ti target and the formation process of TiO_2 films by reactive sputtering Takamura, K. Abe, Y. Sasaki, K. Ti and TiO_2 films were deposited by RF reactive sputtering using a mixed gas of Ar and O_2. TiO_2 films were found to be formed at oxygen flow ratios above 7%. At the critical O_2 flow ratio, the amount of supplied Ti atoms was found to agree with that of O_2 molecules. Above the critical O_2 flow ratio, the amount of supplied O_2 molecules exceeded the gettering effect of the sputtering Ti atoms and oxygen density in the plasma began to increase. As a result, the surface of the Ti target was oxidized and TiO_2 films were formed. The thickness of the oxide film formed on the Ti target increased with increasing oxygen flow ratio and a maximum thickness of 5-6 nm was obtained at oxygen flow ratios of 40-100%. application/pdf journal article Elsevier 2004-06 application/pdf Vacuum 3-4 74 397 401 https://kitami-it.repo.nii.ac.jp/record/6906/files/4655.pdf https://kitami-it.repo.nii.ac.jp/records/6906 eng http://doi.org/10.1016/j.vacuum.2004.01.006 http://www.sciencedirect.com/science/journal/0042207X Elsevier Ltd., K. Takamura, Y. Abe and K. Sasaki, Vacuum, 74(3-4), 2004, 397-401. open access