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oai:kitami-it.repo.nii.ac.jp:00007615 2026-03-05T06:20:55Z 1:87

Time-dependent variation of the target mode in reactive sputtering of Al-O_2 system Abe, Yoshio Shinya, Koji Chiba, Youjiro Kawamura, Midori Sasaki, Katsutaka Sasaki Katsutaka open access gettering effect target voltage chamber pressure Reactive sputtering techniques have been widely used for forming compound thin films. In this study, the time-dependent variation of the target mode of an Al-O_2 system was investigated by measuring the target voltage for various reactive O_2 gas flow ratios and presputtering (i.e., sputtering in pure Ar gas to clean the target surface) times. The Al target remains in metallic mode for a certain period of time after being exposed to an Ar-O_2 plasma before it begins to be oxidized. This period increases with decreasing O_2 flow ratio and with increasing the presputtering time. It is considered that the period is caused by the gettering of O_2 gas by Al films deposited on the substrate and the chamber wall during presputtering. target surface state Elsevier 2010-06 eng journal article AM https://kitami-it.repo.nii.ac.jp/records/7615 Vacuum 84 12 1365 1367 https://kitami-it.repo.nii.ac.jp/record/7615/files/No277.pdf application/pdf 267.0 kB 2016-11-22