2024-03-29T14:23:04Z
https://kitami-it.repo.nii.ac.jp/oai
oai:kitami-it.repo.nii.ac.jp:00006905
2022-12-13T02:19:51Z
1:87
Effects of the Ar-N_2 Sputtering Gas Mixture on the Preferential Orientation of sputtered Ru Films
Kawamura, Midori
Yagi, Kenji
Abe, Yoshio
Sasaki, Katsutaka
open access
http://www.sciencedirect.com/science/journal/00406090
Elsevier B.V., Midori Kawamura, Kenji Yagi, Yoshio Abe and Katsutaka Sasaki, Thin Solid Films, 494(1-2), 2006, 240-243.
We have investigated the influence of N_2 addition to the Ar sputtering gas on the crystal orientation of sputtered Ru films. An rf magnetron sputtering apparatus with a Ru target (99.9%) and a glass substrate heated to 100°C or 300°C was used for the deposition. The crystal structure, chemical composition and electrical properties of the resultant films were investigated. X-ray diffraction (XRD) revealed the dominant orientation at 0% N_2 to be the c-axis. With increasing proportion of N_2 in the sputtering gas at a substrate temperature of 100°C, the intensity of the (002) peak decreased, finally disappearing at 50% N_2. This c-axis suppressed Ru film sputtered at 50% N_2 was found to contain nitrogen by Auger electron spectroscopy (AES), but by annealing the film in vacuum at 400°C, the nitrogen in the film was completely removed. The film orientation remained the same as before annealing. Thus, we have demonstrated a new method for depositing Ru films with a controlled preferential orientation of either c-axis oriented or c-axis suppressed.
application/pdf
Elsevier
2006-01
eng
journal article
AM
https://kitami-it.repo.nii.ac.jp/records/6905
http://doi.org/10.1016/j.tsf.2005.08.130
Thin Solid Films
494
1-2
240
243
https://kitami-it.repo.nii.ac.jp/record/6905/files/4638.pdf
application/pdf
175.7 kB
2016-11-22