2024-03-28T17:15:05Z
https://kitami-it.repo.nii.ac.jp/oai
oai:kitami-it.repo.nii.ac.jp:00006827
2022-12-13T02:24:51Z
1:87
Target surface oxide layer formed by reactive sputtering of Ti target in Ar+O_2 mixed gas
Abe, Yoshio
Takamura, Kenji
Kawamura, Midori
Sasaki, Katsutaka
open access
The following article appeared in Yoshio Abe, Kenji Takamura, Midori Kawamura, and Katsutaka Sasaki, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 23(5), 1371-1374, (2005) and may be found at http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTAD6000023000005001371000001&idtype=cvips&gifs=Yes.
Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Reactive sputtering is one of the most widely used techniques for preparing compound thin films. In this study, a Ti model target, a 1 μm thick Ti film sputter deposited on a Si wafer, was used as the sputtering target. The thickness of the oxide layer formed on the surface of the model target after sputtering in an Ar+O_2 mixed gas atmosphere was measured by ellipsometry under various varying processing parameters including oxygen flow ratio, sputtering time, rf power, and total gas pressure. The oxide layer thickness was varied from a few nanometers to approximately 100 nm by changing the parameters, and a nonuniform oxide layer thickness was observed on the target surface.
application/pdf
American Institute of Physics
2005-09
eng
journal article
VoR
https://kitami-it.repo.nii.ac.jp/records/6827
http://doi.org/10.1116/1.2006135
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
23
5
1371
1374
https://kitami-it.repo.nii.ac.jp/record/6827/files/4284.pdf
application/pdf
83.8 kB
2016-11-22