2024-03-28T11:27:03Z
https://kitami-it.repo.nii.ac.jp/oai
oai:kitami-it.repo.nii.ac.jp:00006392
2022-12-13T02:19:44Z
7:15:23
高周波四極スパッタリングによるTi-SiO_2系 : サーメット薄膜の電気的特性
Electrical Properties of Ti-Si0_2 Cermet Thin Films : Prepared by R. F. Plasma Sputtering
梅沢, 利二
井垣, 誠吾
application/pdf
Ti-SiO_2 cermet thin films were deposited onto a glass substrate by R. F. sputtering from a Ti-SiO_2 composite target, on which the SiO_2 area ratio was varied to obtain different compositions. The cermet thin films sputtered from the target composed of 16% SiO_2-84% Tiarea ratios showed a resistivity of 220±10μΩ-cm and a temperature coefficient of nearly zero The thin films sputtered from the target given a greater SiO_2 area ratio than 16% showed negative temperature coefficient of resistance (TCR), and those from the target given a smaller SiO_2 area ratio showed positive TCR values. The study on the electrical conduction in these cermet thin films suggested that the mechanism by a capillary model was dominant for the films with positive TCRs and the mechanism by a thermally agitated hopping process was predominant for the films with negative TCRs.
北見工業大学
1976-06
jpn
departmental bulletin paper
https://kitami-it.repo.nii.ac.jp/records/6392
北見工業大学研究報告
7
2
275
288
https://kitami-it.repo.nii.ac.jp/record/6392/files/7-2-3.pdf
application/pdf
5.5 MB
2016-11-22